IRFR010PBF

$1.32

Description：MOSFET N-CH 50V 8.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube

SKU:5653545c2e02 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRFR010PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 50V 8.2A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR010PBF

Description：MOSFET N-CH 50V 8.2A DPAK
Series：-
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：25W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR010PBF

IRFR010PBF

Single FETs, MOSFETs Overview

The IRFR010PBF is a Vishay Siliconix N-channel power MOSFET housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage rating of 50 V and a continuous drain current of 8.2 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.20 Ω at VGS = 10 V, with a total gate charge of 10 nC. Maximum power dissipation reaches 25 W at 25 °C, supported by a junction-to-case thermal resistance of 5.0 °C/W. Operating temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Advanced geometry achieves low on-state resistance combined with high transconductance for efficient switching.
Surface-mount DPAK package design reduces stray inductances and capacitance to enhance circuit performance.
Superior reverse energy and diode recovery dV/dt capability ensures robust operation under dynamic conditions.
Excellent temperature stability of electrical parameters facilitates ease of paralleling in high-volume applications.

Single FETs, MOSFETs Applications

DC-to-DC converters
Computers and peripherals
Telecommunication equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm lead-free status and packaging format. The base part number corresponds to tube packaging; tape-and-reel variants require distinct suffixes. Confirm RoHS compliance details via the designated product compliance page before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring moderate voltage handling with fast switching characteristics. Ensure adequate thermal management is provided, as the 25 W dissipation rating assumes a 25 °C case temperature. Validate that the application's gate drive voltage meets the 10 V requirement for optimal RDS(on) performance and current capacity.

Single FETs, MOSFETs Part Context

This device belongs to Vishay’s advanced line of power MOSFET transistors utilizing state-of-the-art silicon technology. The IRFR series specifically targets surface-mount applications where board space is limited. It complements other Vishay offerings like the IRFU9012 IPAK variant, providing designers with flexible mounting options for similar electrical requirements.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include SiHFR010-GE3 and IRFR010TRLPBF. Verify pinout compatibility and thermal resistance ratings when replacing with alternative packages or manufacturers.