IRFR2607Z

Single FETs, MOSFETs Overview

The IRFR2607Z is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a D-Pak (TO-252) surface-mount package. It features a maximum drain-source voltage of 75 V and supports continuous drain currents up to 45 A at 25°C. The device exhibits a maximum on-resistance of 22 mΩ at 10 V gate drive. Thermal performance includes a junction-to-case thermal resistance of 1.38 K/W, with an operating temperature range from -55°C to 175°C. Gate threshold voltage ranges between 2 V and 4 V, while total gate charge is typically 34 nC at 10 V.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced process technology to achieve ultra-low on-resistance per silicon area for high efficiency.
• Designed specifically for automotive applications with fast switching capabilities.
• Supports repetitive avalanche energy up to the maximum junction temperature.

Single FETs, MOSFETs Applications

• Automotive power management systems
• DC-DC converter circuits
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for specific automotive qualification requirements relevant to your design. Ensure the ordering suffix matches the required packaging format. Review the latest product qualification report for any updates regarding material declarations or manufacturing site changes before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 75V N-channel MOSFET with low RDS(on) is required for space-constrained designs using the D-Pak package. Consider the 175°C junction temperature rating for high-thermal environments. Evaluate the gate charge specifications against driver capabilities to ensure adequate switching speeds. Verify that the continuous current rating meets the load requirements under expected ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, known for high-performance power switching solutions. The Z suffix indicates RoHS compliance. It is designed to replace older generation MOSFETs in automotive and industrial applications where lower conduction losses and higher reliability are critical. The D-Pak package offers a balance between thermal performance and PCB footprint size.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering similar voltage ratings and package dimensions. Ensure pin compatibility if replacing directly on existing PCBs. Verify that thermal resistance and current handling capabilities meet or exceed original design specifications. Confirm that gate charge parameters are compatible with existing drive circuits.