IRFR3707TRR

Single FETs, MOSFETs Overview

The IRFR3707TRR is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 30V drain-source voltage rating and a continuous drain current of 56A at 25°C. The device exhibits a maximum on-resistance of 12.5mΩ at Vgs=10V and 9.5mΩ at Vgs=4.5V. Total gate charge is typically 9.6nC at 4.5V. It operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 50W in the DPAK (TO-252) surface-mount package.

Single FETs, MOSFETs Feature Summary

• HEXFET technology providing ultra-low gate impedance for high-frequency switching performance
• Enhanced low on-resistance characteristics optimized for synchronous rectification applications
• Fully characterized avalanche energy and current ratings for robust operation under transient conditions

Single FETs, MOSFETs Applications

• High frequency DC-DC isolated converters with synchronous rectification for telecom and industrial use
• High frequency buck converters for computer processor power
• General purpose power switching applications requiring low conduction losses

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status as manufacturing processes evolve. Check datasheet revisions for updated thermal or electrical parameters before finalizing design integration. Ensure ordering suffix matches required packaging specifications.

Single FETs, MOSFETs Selection Notes

Select this component when low on-resistance and fast switching are critical for efficiency. Consider the 30V voltage rating and 56A current capability against load requirements. Evaluate thermal management needs given the 50W power dissipation limit in the specified package. Verify gate drive compatibility with the 9.6nC gate charge requirement.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes silicon technology in a TO-252AA surface-mount package. The device is designed for high-efficiency power conversion systems where low Rds(on) reduces heat generation. It represents a standard solution for medium-voltage, high-current switching tasks.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IRFR3707ZPBF for identical electrical specifications but different packaging formats. Verify pinout compatibility and thermal resistance values when substituting similar N-channel 30V MOSFETs from other manufacturers.