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IRFR6215TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 150V 13A DPAK. Review the specifications below when checking this part for your BOM.
The IRFR6215TR is a P-Channel Power MOSFET from the Fifth Generation HEXFET series, manufactured by Infineon Technologies. It features a -150V drain-to-source breakdown voltage and a maximum continuous drain current of -13A at 25°C case temperature. The device exhibits a static drain-to-source on-resistance of 0.295Ω at VGS = -10V. It supports a power dissipation of 110W and operates within a junction temperature range of -55°C to +175°C. The component utilizes a D-PAK (TO-252AA) surface-mount package.
Verify the specific ordering suffix against official documentation to confirm tape and reel packaging requirements. Confirm RoHS compliance status and lead-free material specifications with the manufacturer or authorized distributor before procurement. Ensure the component matches the required thermal and electrical ratings for the intended application environment.
Select this component for designs requiring a P-Channel MOSFET with high voltage tolerance and robust avalanche energy handling. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate gate charge parameters to ensure compatibility with available driver circuitry for optimal switching performance.
This part belongs to the HEXFET Power MOSFET family, known for combining low on-resistance with fast switching speeds. The IRFR6215TR specifically represents the surface-mount variant in the TO-252AA package, designed for efficient board layout and thermal management in compact electronic systems.
IRFR6215PBF
The maximum single pulse avalanche energy is rated at 310 mJ.
No, the IRFR6215TR uses a surface-mount D-PAK package. Through-hole versions are available under the IRFU prefix.
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