Single FETs, MOSFETs IRFR6215TR product image

IRFR6215TR

$0.92
  • Description:MOSFET P-CH 150V 13A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:0bab8ee2bbcf Category: Brand:

  
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IRFR6215TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 150V 13A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFR6215TR

  • Description:MOSFET P-CH 150V 13A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):150 V
  • Current - Continuous Drain (Id) @ 25°C:13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:295mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):110W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRFR6215TR

IRFR6215TR

Single FETs, MOSFETs Overview

The IRFR6215TR is a P-Channel Power MOSFET from the Fifth Generation HEXFET series, manufactured by Infineon Technologies. It features a -150V drain-to-source breakdown voltage and a maximum continuous drain current of -13A at 25°C case temperature. The device exhibits a static drain-to-source on-resistance of 0.295Ω at VGS = -10V. It supports a power dissipation of 110W and operates within a junction temperature range of -55°C to +175°C. The component utilizes a D-PAK (TO-252AA) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced processing techniques for low on-resistance per silicon area
  • Features fast switching speed capabilities
  • Includes fully avalanche rated ruggedized design

Single FETs, MOSFETs Applications

  • Power switching applications
  • DC-DC converters
  • Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm tape and reel packaging requirements. Confirm RoHS compliance status and lead-free material specifications with the manufacturer or authorized distributor before procurement. Ensure the component matches the required thermal and electrical ratings for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a P-Channel MOSFET with high voltage tolerance and robust avalanche energy handling. Consider the thermal resistance characteristics when designing heat dissipation solutions. Evaluate gate charge parameters to ensure compatibility with available driver circuitry for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET Power MOSFET family, known for combining low on-resistance with fast switching speeds. The IRFR6215TR specifically represents the surface-mount variant in the TO-252AA package, designed for efficient board layout and thermal management in compact electronic systems.

Single FETs, MOSFETs Replacement Considerations

IRFR6215PBF

Single FETs, MOSFETs FAQ

What is the maximum single pulse avalanche energy rating?

The maximum single pulse avalanche energy is rated at 310 mJ.

Does the device support through-hole mounting?

No, the IRFR6215TR uses a surface-mount D-PAK package. Through-hole versions are available under the IRFU prefix.

IRFR6215TRIRFR6215TR
$0.92
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