IRFSL7434PBF

Description：MOSFET N-CH 40V 195A TO262
Series：HEXFET®, StrongIRFET™
Mfr：Infineon Technologies
Package：Tube

SKU:84423250a303 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRFSL7434PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFSL7434PBF

Description：MOSFET N-CH 40V 195A TO262
Series：HEXFET®, StrongIRFET™
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：324 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10820 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：294W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-262
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for IRFSL7434PBF

IRFSL7434PBF

Single FETs, MOSFETs Overview

The IRFSL7434PBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes the StrongIRFET technology and is housed in an I2PAK (TO-262) through-hole package. The device features a maximum drain-source voltage of 40 V and a continuous drain current of 320 A at 25°C, limited by silicon characteristics. The maximum on-resistance is 1.6 mΩ at a gate-source voltage of 10 V. Key dynamic parameters include a total gate charge of 216 nC and a junction-to-case thermal resistance of 0.5 K/W. The component supports a maximum operating junction temperature of 175 °C.

Single FETs, MOSFETs Feature Summary

StrongIRFET technology provides improved gate, avalanche, and dynamic dV/dt ruggedness.
Fully characterized capacitance and avalanche safe operating area (SOA).
Enhanced body diode dV/dt and dI/dt capability for efficient switching.

Single FETs, MOSFETs Applications

Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type and packaging format. The base part number corresponds to the TO-262 package. Confirm lead-free status and RoHS compliance requirements against project specifications. Ensure the procurement documentation matches the exact manufacturer designation to avoid receiving alternative packages such as D2PAK or TO-220 variants.

Single FETs, MOSFETs Selection Notes

Select this component when a low on-resistance and high current handling capability are required in a through-hole configuration. The 40 V rating suits low-voltage DC-DC conversion and motor control systems. Evaluate the thermal management strategy based on the 0.5 K/W junction-to-case resistance. Consider the gate charge requirements for the driving circuitry to ensure adequate switching speed without excessive driver loss.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET G174/G32 series from Infineon Technologies. It represents a generation of power MOSFETs optimized for industrial and automotive applications requiring robust performance under high stress conditions. The StrongIRFET branding indicates advanced cell architecture designed to minimize conduction losses while maintaining high reliability during transient events.