Single FETs, MOSFETs IRFU220_R4941 product image

IRFU220_R4941

$0.53
  • Description:MOSFET N-CH 200V 4.6A I-PAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube

SKU:1b027fa25e0d Category: Brand:

  
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IRFU220_R4941 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 200V 4.6A I-PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRFU220_R4941

  • Description:MOSFET N-CH 200V 4.6A I-PAK
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):200 V
  • Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:800mOhm @ 2.4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):50W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for IRFU220_R4941

IRFU220_R4941

Single FETs, MOSFETs Overview

The IRFU220 is an N-Channel enhancement mode silicon gate power MOSFET manufactured by Fairchild Semiconductor. It features a TO-251AA package with a maximum drain-to-source voltage of 200V and a continuous drain current of 4.6A at 25°C. The device has a typical on-state resistance of 0.800Ω at VGS=10V and ID=2.4A. It supports a pulsed drain current of 18A and offers single pulse avalanche energy rating of 85mJ. Thermal resistance from junction to case is 2.5°C/W, while junction to ambient is 110°C/W for typical solder mount.

Single FETs, MOSFETs Feature Summary

  • Advanced power MOSFET designed for high speed switching applications requiring low gate drive power.
  • Capable of withstanding specified levels of energy in the breakdown avalanche mode of operation.
  • Features nanosecond switching speeds and linear transfer characteristics.
  • High input impedance allows direct operation from integrated circuits.

Single FETs, MOSFETs Applications

  • Switching regulators
  • Switching converters
  • Motor drivers
  • Relay drivers
  • Drivers for high power bipolar switching transistors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and package type when sourcing replacements. Confirm that the component matches the original manufacturer's specifications for voltage, current, and thermal ratings. Ensure compatibility with existing PCB footprints and mounting requirements. Check for updated datasheets regarding any design changes or obsolescence notices from the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust performance in switching environments. Consider the thermal management capabilities provided by the TO-251AA package. Evaluate the gate charge requirements against the driving circuit's capability. Ensure the operating temperature range aligns with the system's environmental conditions.

Single FETs, MOSFETs Part Context

This part belongs to the IRFU series of N-Channel Power MOSFETs from Fairchild Semiconductor. It is functionally similar to the IRFR220 but differs in packaging, utilizing the TO-251AA format instead of TO-252AA. Both parts share identical electrical characteristics and are designed for general-purpose power switching applications.

Single FETs, MOSFETs Replacement Considerations

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