IRL530STRRPBF

$0.79

Description：MOSFET N-CH 100V 15A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:7f1b72e4ca21 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

IRL530STRRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 100V 15A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL530STRRPBF

Description：MOSFET N-CH 100V 15A D2PAK
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 5V
Rds On (Max) @ Id, Vgs：160mOhm @ 9A, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：28 nC @ 5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：930 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.7W (Ta), 88W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRL530STRRPBF

IRL530STRRPBF

Single FETs, MOSFETs Overview

The Vishay Siliconix IRL530STRRPBF is a third-generation N-channel power MOSFET housed in a D2PAK (TO-263) surface-mount package. It features a drain-source voltage of 100 V and a continuous drain current of 15 A at 25 °C case temperature. The device specifies an on-resistance of 0.16 Ω at VGS = 5.0 V and 0.22 Ω at VGS = 4.0 V, supporting logic-level gate drive applications. Key dynamic parameters include a maximum total gate charge of 28 nC and a repetitive avalanche energy rating of 8.8 mJ. The component operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

Logic level gate drive capability with RDS(on) specified at VGS = 4 V and 5 V
Repetitive avalanche rated for ruggedized circuit designs
Dynamic dV/dt rating provided for high-speed switching performance

Single FETs, MOSFETs Applications

High current surface-mount power conversion circuits
Logic-level controlled switching applications
Automotive OPEN bus architectures requiring ESD protection

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status. Suffixes such as GE3 indicate lead-free and halogen-free construction, while PbF designations denote lead-free terminations that may not be RoHS-compliant. Confirm material categorization details via the manufacturer's compliance definitions before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount topology is required for high-current handling up to 15 A. The D2PAK package offers low internal connection resistance suitable for demanding thermal environments. Ensure the driving circuit can provide sufficient gate voltage to achieve the specified low on-resistance values for optimal efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the SiHL530S series of third-generation power MOSFETs from Vishay Siliconix. These devices are engineered to combine fast switching speeds with low on-resistance and cost-effectiveness. The series utilizes HEX-4 die sizes within the D2PAK package to maximize power capability in a standard surface-mount footprint.