IRLMS1902TR

Single FETs, MOSFETs Overview

The IRLMS1902TR is a single N-channel power MOSFET from the Fifth Generation HEXFET series, housed in a Micro6 (TSOP-6) surface-mount package. It features a drain-source voltage rating of 20V and a maximum continuous drain current of 3.2A at 25°C. The device exhibits a typical on-resistance of 100mΩ at VGS=4.5V and 110mΩ at VGS=2.5V. Key electrical parameters include a gate charge of 4.7nC (typical @4.5V), a total gate charge of 10nC, and a reverse transfer capacitance of 18pF. Thermal characteristics specify a junction-to-ambient resistance of 75K/W and a maximum junction temperature of 150°C.

Single FETs, MOSFETs Feature Summary

• Micro6 package design provides significantly reduced on-resistance compared to standard SOT-23 packages while increasing current handling capability.
• Advanced processing techniques achieve low on-resistance per silicon area for improved efficiency.
• Fast switching speed combined with ruggedized device design ensures reliable operation.
• Suitable for applications requiring minimal printed circuit board space.

Single FETs, MOSFETs Applications

• Power distribution networks
• Load switches
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'TR' corresponds to tape and reel packaging requirements. Confirm that the component meets RoHS compliance standards as indicated by the PbF designation. Ensure the selected variant aligns with the intended consumer market qualification standards defined by Infineon Technologies.

Single FETs, MOSFETs Selection Notes

Select this component when compact form factors are critical due to the Micro6 package dimensions. Evaluate thermal management needs against the 75K/W junction-to-ambient resistance rating. Consider the 20V voltage rating and 3.2A current capacity relative to the specific load requirements of the target application circuit.

Single FETs, MOSFETs Part Context

This part belongs to the IRLMS family of small signal MOSFETs designed for space-constrained environments. The Micro6 package offers a customized leadframe structure that enhances thermal performance and electrical characteristics over traditional SOT-23 counterparts within the same manufacturer portfolio.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes may include other HEXFET devices with similar 20V ratings and Micro6 packaging. Verify pinout compatibility and ensure equivalent or superior RDS(on) and current handling capabilities before implementation.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage rating?

The maximum gate-source voltage rating is +/-12V.

How does the Micro6 package compare to SOT-23?

The Micro6 package achieves approximately 60% less on-resistance and nearly 300% higher current handling compared to a similar size SOT-23 package.