IRLR3105TRLPBF

Single FETs, MOSFETs Overview

The IRLR3105PbF is a HEXFET Power MOSFET featuring an N-channel enhancement mode design in a D-Pak (TO-252) surface-mount package. It provides a drain-source breakdown voltage of 55V and supports a continuous drain current of 25A at a case temperature of 25°C, with a maximum on-resistance of 37mΩ at VGS=10V. The device operates up to a junction temperature of 175°C and includes logic-level gate drive capabilities.

Single FETs, MOSFETs Feature Summary

• Logic-Level Gate Drive
• Advanced Process Technology
• Ultra Low On-Resistance
• Fast Switching

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control
• Power management

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm lead-free status and specific packaging variations. Ensure the component meets industrial market qualification standards as specified in the datasheet. Confirm that the selected variant aligns with the required thermal and electrical constraints for the target application.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low conduction losses and fast switching speeds within a 55V system. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the gate drive voltage requirements match the logic-level specifications provided in the electrical characteristics table.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The D-Pak package is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement matches the 55V rating, 25A current capacity, and TO-252 package dimensions.