IRLS3036TRL7PP

Single FETs, MOSFETs Overview

The IRLS3036-7PPbF is a single N-channel HEXFET power MOSFET in a D2PAK (TO-263) package. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 300A (silicon limited) or 240A (package limited). The device exhibits a typical on-resistance of 1.5mΩ and a maximum of 1.9mΩ at VGS=10V, with higher values of 1.7mΩ and 2.2mΩ respectively at VGS=4.5V. Total gate charge is typically 110nC with a maximum of 160nC. It supports an operating junction temperature range from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Optimized for logic level drive with very low on-resistance at 4.5V gate-source voltage
• Enhanced ruggedness including improved gate, avalanche, and dynamic dV/dt capabilities
• Fully characterized capacitance and avalanche safe operating area
• Improved body diode reverse recovery characteristics

Single FETs, MOSFETs Applications

• DC motor drive
• High efficiency synchronous rectification in SMPS
• Uninterruptible power supply
• High speed power switching
• Hard switched and high frequency circuits

Single FETs, MOSFETs Procurement Notes

Verify the component status before procurement as it may be marked as Not Recommended for New Designs (NRND). Confirm that the specific ordering suffix matches the required package and tape/reel specifications. Ensure the application environment stays within the absolute maximum ratings defined in the datasheet, particularly regarding thermal management and current derating.

Single FETs, MOSFETs Selection Notes

Select this component when a 60V N-channel MOSFET with high current capability is required. Consider the package-limited current rating of 240A for thermal design purposes rather than the silicon limit. Evaluate the gate charge requirements against the driver capability, especially for high-frequency applications where switching losses are critical.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs. It utilizes silicon technology and is designed for industrial market applications. The D2PAK-7 package provides a robust solution for surface mount assembly with high power dissipation capabilities.

Single FETs, MOSFETs Replacement Considerations

Check for direct cross-references within the manufacturer's portfolio. Verify pinout compatibility and electrical parameter equivalence if substituting with other N-channel MOSFETs in the same voltage class.