IS62WV25616EALL-55BLI

Memory IC Overview

The IS62WV25616EALL-55BLI is a 4 Mbit (256K x 16) asynchronous static random-access memory (SRAM) manufactured by ISSI. It features a parallel interface with a maximum access time of 55 ns and operates within a supply voltage range of 1.65 V to 2.2 V. The device supports single data rate (SDR) operation and is housed in a 48-VFBGA package measuring 6x8 mm. It functions reliably across an industrial temperature range of -40°C to +85°C.

Memory IC Feature Summary

• CMOS low power technology providing high-speed asynchronous access
• Ultra-low standby current capability for power-sensitive applications
• TTL-compatible inputs and outputs for direct logic interfacing

Memory IC Applications

• Embedded cache memory systems
• Industrial control equipment
• Consumer electronic devices requiring low power consumption

Memory IC Procurement Notes

Verify the specific suffix 'EALL' against official datasheets to confirm the 1.65V–2.2V voltage range, as other variants may differ. Ensure the 48-VFBGA package dimensions match your PCB footprint requirements. Confirm moisture sensitivity level handling procedures are followed during assembly to prevent damage.

Memory IC Selection Notes

Select this component when a 256K x 16 organization is required with 55 ns speed at low voltages. Compare against standard 3.3V SRAMs if power efficiency is critical. Verify that the TFBGA-48 package is compatible with your manufacturing capabilities and that the operating temperature range meets environmental specifications.

Memory IC Part Context

This part belongs to the IS62WV25616 series of low-voltage, ultra-low power CMOS static RAMs. The series offers various access times and packaging options to suit different design constraints while maintaining consistent 4 Mbit capacity and 256K x 16 architecture across the family.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.