IV1Q12080D7Z

$7.40

Description：SIC MOSFET, 1200V 80MOHM, TO263-
Series：-
Mfr：Inventchip
Package：Tube

SKU:17eb72f0379e Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV1Q12080D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is SIC MOSFET, 1200V 80MOHM, TO263-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV1Q12080D7Z

Description：SIC MOSFET, 1200V 80MOHM, TO263-
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：100mOhm @ 10A, 20V
Vgs(th) (Max) @ Id：5V @ 3.11mA
Gate Charge (Qg) (Max) @ Vgs：76 nC @ 20 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：1680 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：185.4W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV1Q12080D7Z

IV1Q12080D7Z

Single FETs, MOSFETs Overview

The IV1Q12080D7Z is a silicon carbide (SiC) MOSFET manufactured by Inventchip Technology. It features an N-channel configuration with a drain-source voltage rating of 1200 V and a maximum on-resistance of 80 mΩ at 25°C. The device utilizes a TO-263 package for through-hole mounting. Designed for high-efficiency power conversion, it supports a continuous drain current of 20 A at case temperature and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes silicon carbide semiconductor technology for enhanced thermal performance and switching efficiency.
Engineered to meet automotive-grade reliability standards for demanding power applications.
Features low on-resistance characteristics to minimize conduction losses in high-voltage systems.

Single FETs, MOSFETs Applications

Automotive power electronics and electric vehicle drivetrains
High-efficiency DC-DC converters
Industrial motor drives and inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'D7Z' against official Inventchip documentation to confirm the exact package variant and automotive qualification status. Ensure compatibility with TO-263 mounting requirements and validate thermal management solutions for the specified power dissipation limits before integration into final designs.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust 1200 V blocking capability combined with low conduction losses. Consider the TO-263 package for through-hole assembly needs and evaluate the 80 mΩ on-resistance against system efficiency targets. Confirm that the operating environment aligns with the specified wide temperature range and automotive-grade specifications.

Single FETs, MOSFETs Part Context

Inventchip Technology specializes in silicon carbide power devices and gate driver ICs. Founded in 2017, the company focuses on developing advanced SiC components for high-performance power management. The IV1Q12080D7Z represents their automotive-grade SiC MOSFET portfolio, targeting high-reliability industrial and automotive sectors.

Single FETs, MOSFETs Replacement Considerations

Consult official Inventchip substitution guides or equivalent manufacturer datasheets for compatible 1200V SiC MOSFETs in TO-263 packages. Verify pinout compatibility and electrical parameter equivalence before replacing the original component.