IV2Q06025T4Z

$10.61

Description：GEN 2, SIC MOSFET, 650V 25MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:f555e60371df Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q06025T4Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN 2, SIC MOSFET, 650V 25MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q06025T4Z

Description：GEN 2, SIC MOSFET, 650V 25MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：99A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：33mOhm @ 40A, 18V
Vgs(th) (Max) @ Id：4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：3090 pF @ 600 V
FET Feature：-
Power Dissipation (Max)：454W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4
Package / Case：TO-247-4

Single FETs, MOSFETs datasheet and documents for IV2Q06025T4Z

IV2Q06025T4Z

Single FETs, MOSFETs Overview

The IV2Q06025T4Z is a second-generation silicon carbide (SiC) MOSFET designed for automotive applications. It features a 650V drain-source voltage rating and a maximum continuous drain current of 99A at 25°C case temperature. The device exhibits a typical static on-resistance of 25mΩ at VGS=18V and ID=40A. It supports an operating junction temperature up to 175°C and includes a Kelvin gate input for optimized driver circuit design.

Single FETs, MOSFETs Feature Summary

Second-generation SiC MOSFET technology with +15V to +18V gate drive requirements
High blocking voltage combined with low on-resistance characteristics
Ultra-fast and robust intrinsic body diode performance
Kelvin gate input configuration to ease driver circuit design

Single FETs, MOSFETs Applications

Electric vehicle chargers
On-board chargers (OBCs)
Solar boosters
Automotive compressor inverters
AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component against the official InventChip datasheet Rev1.0 dated March 2024. Confirm that the part number matches the specific marking code 2Q06025T4Z. Ensure the package type corresponds to TO247-4. Check for AEC-Q101 qualification status as documented in the manufacturer's specifications before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion requiring low switching losses. The device is suitable for designs needing operation up to 175°C junction temperature. Consider the 25mΩ on-resistance for thermal management calculations. Verify compatibility with +15V to +18V gate drive voltages and ensure the PCB layout accommodates the TO247-4 package dimensions.

Single FETs, MOSFETs Part Context

This component belongs to InventChip's Gen2 SiC MOSFET family, specifically engineered for automotive-grade reliability. It utilizes advanced silicon carbide technology to achieve superior performance compared to traditional silicon devices. The product line targets demanding environments where high voltage and high temperature operation are critical.