IV2Q06060D7Z

$7.40

Description：GEN 2, SIC MOSFET, 650V 60MOHM,
Series：-
Mfr：Inventchip
Package：Tube

SKU:e814d562bffe Category: Single FETs, MOSFETs Brand: Inventchip

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Product introduction

IV2Q06060D7Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Inventchip. Its product description is GEN 2, SIC MOSFET, 650V 60MOHM,. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IV2Q06060D7Z

Description：GEN 2, SIC MOSFET, 650V 60MOHM,
Series：-
Mfr：Inventchip
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：78mOhm @ 15A, 18V
Vgs(th) (Max) @ Id：4.5V @ 7.5mA
Gate Charge (Qg) (Max) @ Vgs：94.7 nC @ 18 V
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：174W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-263-7
Package / Case：TO-263-7

Single FETs, MOSFETs datasheet and documents for IV2Q06060D7Z

IV2Q06060D7Z

Single FETs, MOSFETs Overview

The IV2Q06060D7Z is a second-generation automotive-grade Silicon Carbide (SiC) MOSFET from Inventchip, designed for high-efficiency power conversion. It features a 650V drain-source voltage and a maximum continuous drain current of 43A at 25°C case temperature. The device exhibits a low static on-resistance of 60mΩ at VGS=18V and ID=15A. Key electrical parameters include a total gate charge of 64nC, input capacitance of 1218pF, and turn-on switching energy of 87.4μJ at 25°C. It operates with a recommended gate drive range of +15V to +18V and supports junction temperatures up to 175°C.

Single FETs, MOSFETs Feature Summary

Second-generation SiC MOSFET technology optimized for +15V to +18V gate drive applications
High blocking voltage combined with ultra-low on-resistance for enhanced efficiency
Ultra-fast and robust intrinsic body diode with low reverse recovery characteristics
Kelvin gate input configuration to simplify driver circuit design and reduce noise

Single FETs, MOSFETs Applications

On-board chargers (OBC) and DC-DC converters
Solar boosters and photovoltaic inverters
Automotive compressor inverters
AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Inventchip datasheet Rev1.0 dated August 2024 to confirm authenticity. Ensure the ordering suffix matches the specific TO263-7 package variant. Check for AEC-Q101 qualification status if automotive compliance is required. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values provided in the documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-frequency switching and elevated operating temperatures. The Kelvin source connection facilitates precise gate control, reducing Miller effect interference. Evaluate the thermal impedance characteristics against the system's heat dissipation capabilities. Consider the low output capacitance stored energy for minimizing switching losses in hard-switching topologies.

Single FETs, MOSFETs Part Context

This part belongs to Inventchip's Gen2 SiC MOSFET family, targeting automotive and industrial power electronics. It utilizes silicon carbide semiconductor material to achieve superior performance compared to traditional silicon devices. The TO263-7 package provides efficient thermal transfer and mechanical stability for surface-mount assembly processes.