IV2Q12040T4Z

Single FETs, MOSFETs Overview

The IV2Q12040T4Z is a second-generation automotive-grade Silicon Carbide (SiC) MOSFET from Inventchip Technology, housed in a TO-247-4 package. It features a 1200V drain-source voltage rating and a maximum continuous drain current of 65A at 25°C case temperature. The device exhibits a typical static on-resistance of 40mΩ at VGS=18V and ID=20A. Key electrical parameters include a total gate charge of 110nC, an input capacitance of 2160pF, and a thermal resistance from junction to case of 0.4°C/W. It supports a recommended turn-on voltage of 15V to 18V and operates up to a junction temperature of 175°C.

Single FETs, MOSFETs Feature Summary

• Second-generation SiC MOSFET technology optimized for +15V to +18V gate drive requirements.
• Kelvin gate input configuration included to simplify driver circuit design and reduce noise coupling.
• Ultra-fast and robust intrinsic body diode with low reverse recovery charge and time.
• Qualified under AEC-Q101 standards for automotive reliability applications.

Single FETs, MOSFETs Applications

• Electric vehicle (EV) chargers
• On-board chargers (OBCs)
• Solar boosters
• Automotive compressor inverters
• AC/DC power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'Z' against the manufacturer's official documentation to confirm assembly location and lot traceability details. Ensure that the procurement specifications align with the absolute maximum ratings, particularly the transient VGS limits and soldering temperature constraints. Confirm compliance with RoHS directives and AEC-Q101 qualification status required for your target application environment before finalizing orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing high-efficiency power conversion systems requiring low conduction losses and fast switching speeds. The Kelvin source pin necessitates a dedicated connection to the driver ground to fully utilize its noise immunity benefits. Consider the thermal management requirements based on the 0.4°C/W junction-to-case resistance and the derating curves provided in the datasheet for accurate power dissipation calculations.

Single FETs, MOSFETs Part Context

This device belongs to Inventchip's Gen2 SiC MOSFET portfolio, designed specifically for demanding automotive and industrial power electronics. It represents an advancement over previous generations by offering improved on-resistance characteristics and switching performance while maintaining compatibility with standard gate drive voltages. The TO-247-4 package provides a robust mechanical solution for high-power density designs.

Single FETs, MOSFETs Replacement Considerations

Direct cross-referencing requires matching the 1200V rating, TO-247-4 package, and similar Ron values. Verify if alternative manufacturers offer equivalent AEC-Q101 qualified parts with comparable gate charge and switching energy metrics. Ensure that any substitute part supports the Kelvin gate configuration or can be adapted to the existing PCB layout without compromising thermal performance.

Single FETs, MOSFETs FAQ

What is the recommended gate drive voltage range for the IV2Q12040T4Z?

The recommended turn-on voltage is between +15V and +18V, with a typical turn-off voltage of -3.5V.

Does the IV2Q12040T4Z support high-temperature operation?

Yes, the device is rated for an operating junction temperature range of -55°C to 175°C.

What is the purpose of the fourth pin in the TO-247-4 package?

The fourth pin serves as the Kelvin source, providing a separate low-current path for the gate driver ground to minimize noise interference during switching.