IXFA20N50P3

Single FETs, MOSFETs Overview

The Littelfuse IXFA20N50P3 is an N-Channel HiPerFET MOSFET from the Polar3 series, housed in a TO-263AA package. It features a drain-source breakdown voltage (VDSS) of 500 V and a continuous drain current (ID) of 20 A at case temperatures ranging from 25°C to 150°C. The device exhibits a maximum on-resistance (RDS(on)) of 300 mΩ. Key electrical characteristics include high dv/dt capability, avalanche rating, and low gate charge (Qg). The component is designed for high-efficiency power conversion with reduced packaging inductance.

Single FETs, MOSFETs Feature Summary

• Ultra-low on-state resistance and gate charge for enhanced efficiency
• Fast body diode recovery characteristics
• High dv/dt strength and avalanche ruggedness
• Low package inductance design

Single FETs, MOSFETs Applications

• High-frequency switching power supplies
• DC-DC converters
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix P3 against the manufacturer's official datasheet to confirm pinout and thermal specifications. Ensure the TO-263AA footprint matches your PCB layout requirements. Confirm that the 500V rating and 20A current capacity align with your circuit's peak stress conditions. Check for any regional shipping restrictions or compliance certifications required for your target market before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when high switching frequency and low conduction losses are critical. The Polar3 technology offers superior performance compared to standard planar MOSFETs. Consider the thermal management capabilities of the TO-263 package for your heat sink design. Evaluate the gate charge requirements against your driver capabilities to ensure optimal switching speeds without excessive drive loss.

Single FETs, MOSFETs Part Context

This part belongs to Littelfuse's Polar3 series of N-Channel HiPerFETs, which utilize trench gate field-stop technology. This family is engineered for high-power density applications requiring fast switching and low losses. The IXFA20N50P3 shares similarities with other variants like IXFP20N50P3 but differs in package type and specific thermal characteristics.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include IXFP20N50P3 (TO-247), IXFQ20N50P3 (TO-247AD), and IXFH20N50P3 (TO-220). Verify pin compatibility and thermal resistance values before substitution. Ensure the replacement device meets or exceeds the original 500V/20A specifications and RDS(on) limits.