IXFC36N50P

Single FETs, MOSFETs Overview

The IXFC36N50P is a PolarHV HiPerFET N-Channel enhancement mode power MOSFET manufactured by IXYS. It utilizes silicon chip technology on a direct-copper-bond substrate housed in an ISOPLUS 220 package. Key electrical parameters include a drain-source breakdown voltage of 500 V, a continuous drain current of 36 A, and a maximum drain-source on-resistance of 170 mOhms. The device features avalanche rating capability and operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Features a silicon chip mounted on a direct-copper-bond substrate for high power dissipation capabilities.
• Provides an isolated mounting surface with 2500V electrical isolation between the drain and tab.
• Incorporates a fast intrinsic diode with low drain-to-tab capacitance.

Single FETs, MOSFETs Applications

• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer source when sourcing this component, as IXYS has undergone corporate restructuring and asset acquisitions. Confirm that the part number corresponds to the original IXYS PolarHV specifications rather than generic equivalents from other manufacturers who may use similar naming conventions. Ensure the datasheet matches the ISOPLUS 220 package dimensions and electrical characteristics listed above.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high power density and easy assembly due to its flange-mount design. The low drain-to-tab capacitance makes it suitable for high-frequency switching environments. Consider the thermal management requirements associated with the direct-copper-bond substrate to ensure optimal performance in switched-mode power supplies or motor control systems.

Single FETs, MOSFETs Part Context

This component belongs to the IXYS PolarHV HiPerFET series, which are designed for high-performance power switching applications. The ISOPLUS 220 package provides robust mechanical stability and efficient heat transfer. This series is engineered to offer advantages in space savings and high power density compared to traditional discrete transistor assemblies.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with IXTQ36N50P for through-hole TO-3P-3 compatibility if board layout allows. Verify pinout and thermal interface specifications before substituting with parts from other manufacturers such as Littelfuse or Inchange Semiconductor.