IXFH15N60

Single FETs, MOSFETs Overview

The IXYS IXFH15N60 is a single N-channel enhancement mode power MOSFET from the HiPerFET HDMOSTM family, housed in an isolated TO-247AD package. It features a 600V drain-source breakdown voltage and a continuous drain current of 15A at 25°C case temperature. The device utilizes a low RDS(on) process with a maximum on-resistance of 0.50Ω. Key electrical characteristics include a gate threshold voltage range of 2.0V to 4.5V, a total gate charge of 151nC to 170nC, and a fast intrinsic rectifier with a reverse recovery time under 250ns. It supports a peak pulsed drain current of 60A and operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• HDMOSTM process technology providing low on-resistance and high dv/dt performance
• Unclamped Inductive Switching (UIS) rated ruggedness for robust operation
• Fast intrinsic body diode with low reverse recovery time suitable for synchronous applications
• Isolated mounting hole design facilitating easy heat sink attachment

Single FETs, MOSFETs Applications

• DC-DC converters
• Synchronous rectification circuits
• Switched-mode and resonant-mode power supplies
• AC motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant during procurement, as the IXFM suffix denotes the TO-204AE package while IXFH indicates the TO-247AD configuration. Confirm RoHS compliance status through official manufacturer documentation or authorized distributors prior to ordering. Ensure thermal management solutions align with the specified junction temperature limits and power dissipation ratings found in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high switching speeds and low conduction losses in medium-power applications. The integrated fast intrinsic diode eliminates the need for external free-wheeling rectifiers in many topologies. Evaluate the thermal impedance characteristics against the expected duty cycle and ambient conditions to ensure reliable operation within the safe operating area limits defined by the manufacturer.

Single FETs, MOSFETs Part Context

This device belongs to the HiPerFET family of power MOSFETs designed by IXYS Corporation. The family emphasizes superior dv/dt performance and reduced reverse recovery times compared to standard MOSFETs. The IXFH15N60 specifically targets applications where space savings and high power density are critical, offering a balance between voltage blocking capability and current handling in standard industrial packages.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 600V rating, 15A continuous current, and TO-247AD package dimensions. Verify that substitute devices maintain comparable RDS(on), gate charge, and reverse recovery specifications to preserve circuit efficiency and switching behavior without redesigning the drive or thermal management infrastructure.