IXFH34N50P3

Single FETs, MOSFETs Overview

The IXFH34N50P3 is an N-channel enhancement mode MOSFET from the IXYS HiperFET Polar3 series. It features a 500 V drain-source voltage rating and a continuous drain current of 34 A. The device has a maximum power dissipation of 695 W and a typical on-resistance of 180 mΩ. It utilizes a TO-247-3 through-hole package with a gate charge of 60 nC.

Single FETs, MOSFETs Feature Summary

• HiperFET Polar3 technology for enhanced switching performance
• Avalanche rated ruggedness for robust operation
• Fast intrinsic rectifier characteristics

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Industrial motor control systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'P3' to confirm compatibility with HiperFET Polar3 specifications. Ensure the TO-247-3 lead frame matches the target PCB footprint. Confirm thermal management requirements align with the 695 W dissipation rating under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and fast intrinsic rectification are required. The 500 V rating suits medium-voltage applications, while the 34 A current capacity supports moderate load demands. Consider the 180 mΩ on-resistance for efficiency optimization in conduction-heavy scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiperFET Polar3 family, designed for high-efficiency power switching. It succeeds earlier generations by offering improved avalanche energy handling and faster recovery times compared to standard high-voltage MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IXFH30N50P and IXTH36N50P within the same manufacturer lineup. Verify pinout compatibility and thermal resistance values before swapping to ensure circuit integrity.