IXFN26N90

$16.80

Description：MOSFET N-CH 900V 26A SOT-227B
Series：HiPerFET™
Mfr：IXYS
Package：Tube

SKU:507dce0c9497 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFN26N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 900V 26A SOT-227B. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFN26N90

Description：MOSFET N-CH 900V 26A SOT-227B
Series：HiPerFET™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：900 V
Current - Continuous Drain (Id) @ 25°C：26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：240 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：10800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：600W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227B
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for IXFN26N90

IXFN26N90

Single FETs, MOSFETs Overview

The IXFN26N90 is an N-channel enhancement mode power MOSFET from the HiPerFET series, housed in a miniBLOC (SOT-227) package. It features a maximum drain-source voltage of 900 V and a continuous drain current of 26 A at 25°C. The device utilizes HDMOSTM technology to achieve a low on-resistance of 300 mΩ. Key electrical parameters include a gate threshold voltage ranging from 3.0 V to 5.0 V, a total gate charge of 240 nC, and a maximum power dissipation of 600 W. The component supports an operating junction temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust operation under transient energy conditions
Features a fast intrinsic body diode with low reverse recovery time
Utilizes HDMOSTM process for minimized on-resistance
Designed with low package inductance for high dv/dt performance

Single FETs, MOSFETs Applications

Switched-mode power supplies
Resonant-mode power supplies
DC-DC converters
Battery chargers
DC choppers

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official Littelfuse or IXYS documentation to confirm exact manufacturing revisions. Ensure thermal interface materials are compatible with the aluminum nitride isolation used in the miniBLOC package. Confirm that the application environment remains within the specified -55°C to +150°C junction temperature limits to maintain reliability.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring avalanche capability and fast switching characteristics. The 900 V rating suits industrial and commercial power conversion systems. Consider the 300 mΩ on-resistance for efficiency optimization in medium-current designs. Verify that the gate drive circuitry can support the required threshold voltage levels for reliable turn-on.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET family of single-die N-channel MOSFETs. It shares design lineage with the IXFN25N90, differing primarily in current handling and on-resistance specifications. Both devices utilize the same SOT-227B outline and share similar thermal and electrical characteristics tailored for high-performance power switching applications.