IXFN32N120P

Single FETs, MOSFETs Overview

The IXFN32N120P is a single N-Channel Si MOSFET module from the HiPerFET series, housed in an SOT-227-4 screw-mount package. It features a 1.2 kV drain-source breakdown voltage and a continuous drain current of 32 A. The device exhibits a maximum on-resistance of 310 mOhms with a gate threshold voltage of 6.5 V. Operating within a temperature range of -55°C to +150°C, it supports a power dissipation of 1 kW. Electrical characteristics include a rise time of 62 ns, fall time of 58 ns, and turn-off delay of 88 ns.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 1.2 kV breakdown rating for robust operation in demanding environments
• Low on-state resistance design to minimize conduction losses during high-current switching
• Screw-mount construction providing secure mechanical attachment and efficient thermal management

Single FETs, MOSFETs Applications

• Industrial motor drives and control systems
• High-power DC-DC converters and power supplies
• Inverter circuits for renewable energy applications

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and RoHS compliance status directly with the manufacturer or authorized distributor before procurement. Confirm that the SOT-227-4 mounting interface matches your heatsink specifications. Ensure gate drive voltages remain within the specified limits to prevent device damage. Cross-reference part numbers to avoid confusion with similar HiPerFET variants.

Single FETs, MOSFETs Selection Notes

Select this component when a single-channel solution with high voltage tolerance and moderate current capacity is required. The screw-mount package is suitable for applications where board space allows for direct chassis mounting. Consider the thermal resistance and available cooling methods to ensure the 1 kW dissipation rating is maintained under actual operating conditions.

Single FETs, MOSFETs Part Context

This module belongs to the HiPerFET family, which utilizes advanced silicon planar technology to achieve low on-resistance and fast switching speeds. The SOT-227-4 package is a standard industry form factor designed for high-power discrete and module applications requiring reliable thermal performance and electrical isolation.