Single FETs, MOSFETs IXFN32N80P product image

IXFN32N80P

$15.36
  • Description:MOSFET N-CH 800V 29A SOT-227B
  • Series:HiPerFET™, Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube

SKU:ea0592fae04d Category: Brand:

  
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IXFN32N80P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 800V 29A SOT-227B. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFN32N80P

  • Description:MOSFET N-CH 800V 29A SOT-227B
  • Series:HiPerFET™, Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:270mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id:5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:8820 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):625W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Supplier Device Package:SOT-227B
  • Package / Case:SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for IXFN32N80P

IXFN32N80P

Single FETs, MOSFETs Overview

The IXFN32N80P is an N-Channel Enhancement Mode Power MOSFET from the PolarHVTM HiPerFET series, manufactured by IXYS. It features a breakdown voltage of 800 V and a continuous drain current of 29 A at 25°C case temperature. The device has a maximum on-resistance of 270 mΩ and supports a power dissipation of 625 W. It operates within a junction temperature range of -55°C to +150°C and utilizes a miniBLOC (SOT-227B) package with aluminum nitride isolation.

Single FETs, MOSFETs Feature Summary

  • Encapsulating epoxy meets UL 94 V-0 flammability classification
  • Unclamped Inductive Switching (UIS) rated for robust operation
  • Fast recovery intrinsic diode with low package inductance

Single FETs, MOSFETs Applications

  • High power density switching circuits
  • Space-saving power conversion designs
  • Applications requiring easy mounting and protection

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer designation as IXYS when sourcing this component, despite potential listing variations. Confirm the specific package type is SOT-227B (miniBLOC) and check for RoHS compliance status against current regulatory requirements. Ensure thermal management solutions align with the specified junction temperature limits and power dissipation ratings provided in the official datasheet.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability and moderate current handling in a compact form factor. The aluminum nitride isolation provides electrical safety and thermal efficiency. Consider the UIS rating for inductive load environments. Verify gate drive compatibility with the specified threshold voltages and total gate charge requirements for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS PolarHVTM HiPerFET family of power MOSFETs. These devices are engineered for high-voltage applications, combining fast switching characteristics with rugged avalanche performance. The miniBLOC packaging facilitates efficient heat transfer and secure mechanical mounting in industrial and commercial power systems.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 800V rating, 29A current capacity, and SOT-227B footprint. Verify that alternative components meet the same UIS and thermal isolation standards.

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