IXTF1N250

$36.23

Description：MOSFET N-CH 2500V 1A ISOPLUS I4
Series：-
Mfr：Littelfuse Inc.
Package：Tube

SKU:2d041686ee7b Category: Single FETs, MOSFETs Brand: Littelfuse Inc.

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Product introduction

IXTF1N250 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 2500V 1A ISOPLUS I4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTF1N250

Description：MOSFET N-CH 2500V 1A ISOPLUS I4
Series：-
Mfr：Littelfuse Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：2500 V
Current - Continuous Drain (Id) @ 25°C：1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1660 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：110W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：ISOPLUS i4-PAC™
Package / Case：i4-Pac™-5 (3 Leads)

Single FETs, MOSFETs datasheet and documents for IXTF1N250

IXTF1N250

Single FETs, MOSFETs Overview

The Littelfuse IXTF1N250 is a high-voltage N-channel enhancement mode power MOSFET featuring an electrically isolated tab. It provides a drain-source voltage rating of 2500 V and a continuous drain current of 1 A at 25°C case temperature. The device incorporates silicon chip on direct-copper bond substrate technology, ensuring robust performance in demanding environments. Key electrical characteristics include a maximum on-resistance of 40 Ω and a peak pulsed drain current capability of 6 A.

Single FETs, MOSFETs Feature Summary

Features an electrically isolated mounting surface for simplified thermal management without additional insulators.
Utilizes silicon chip on direct-copper bond substrate technology for enhanced power density.
Provides 2500 V electrical isolation between the tab and circuit components.

Single FETs, MOSFETs Applications

High voltage power supplies
Capacitor discharge circuits
Pulse circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Littelfuse distributors or certified supply chain partners. Confirm datasheet revision DS100222(12/09) matches physical markings. Ensure storage conditions comply with moisture sensitivity levels to prevent package degradation prior to soldering.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capabilities combined with galvanic isolation. Evaluate thermal resistance values against system heat dissipation requirements. Verify gate drive voltage compatibility with the specified threshold and maximum ratings to ensure reliable switching operation.

Single FETs, MOSFETs Part Context

This discrete MOSFET belongs to the high-voltage power semiconductor portfolio originally developed by IXYS Corporation, now part of Littelfuse. The ISOPLUS i4-Pak package design facilitates efficient mounting while maintaining electrical safety standards for high potential differences within electronic assemblies.

Single FETs, MOSFETs Replacement Considerations

Consult official Littelfuse documentation for verified substitute part numbers. Cross-reference specifications including voltage ratings, current limits, and package dimensions before implementation.