Single FETs, MOSFETs IXTP1N80P product image

IXTP1N80P

$1.22
  • Description:MOSFET N-CH 800V 1A TO220AB
  • Series:Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube

SKU:0b2bd0289aaa Category: Brand:

  
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IXTP1N80P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 800V 1A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXTP1N80P

  • Description:MOSFET N-CH 800V 1A TO220AB
  • Series:Polar
  • Mfr:Littelfuse Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:14Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:250 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):42W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for IXTP1N80P

IXTP1N80P

Single FETs, MOSFETs Overview

The Littelfuse IXTP1N80P is an N-Channel Enhancement Mode Power MOSFET rated for a drain-source voltage (VDSS) of 800V and a continuous drain current (ID25) of 1A at 25°C case temperature. It features a maximum on-state resistance (RDS(on)) of 14Ω at VGS = 10V. The device is avalanche rated with an energy capability (EAS) of 75mJ. It operates within a junction temperature range of -55°C to +150°C and utilizes the TO-220 package.

Single FETs, MOSFETs Feature Summary

  • Avalanche rated for robust transient handling
  • Low gate charge (QG) for efficient switching
  • Fast intrinsic rectifier with low package inductance

Single FETs, MOSFETs Applications

  • DC-DC Converters
  • Switch-Mode and Resonant-Mode Power Supplies
  • AC and DC Motor Drives
  • Discharge Circuits in Lasers, Spark Igniters, RF Generators
  • High Voltage Pulse Power Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'P' corresponds to the TO-220 package variant when ordering. Confirm that the component meets the required thermal management specifications for your application, as the continuous current rating is dependent on case temperature. Ensure compatibility with the 800V breakdown voltage for your circuit design.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring moderate current handling up to 1A. The 800V rating makes it suitable for industrial power supplies and motor drives. Consider the 14Ω RDS(on) when calculating conduction losses, as it is higher than lower-voltage counterparts. The TO-220 package facilitates easy mounting and heat dissipation.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS PolarMOS family, now under Littelfuse. It is designed for general-purpose high-voltage switching. The series includes variants with different packages such as TO-251, TO-252, and TO-263, sharing similar electrical characteristics but differing in physical form factor and thermal performance.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IXTU1N80P (TO-251), IXTY1N80P (TO-252), and IXTA1N80P (TO-263). Verify pinout compatibility, particularly regarding the source and drain connections, as package orientations may differ between TO-220 and surface-mount variants.

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