JANS1N5811URS

Single Diodes Overview

The JANS1N5811URS is a single fast recovery rectifier diode manufactured by Microchip Technology. It features a 150 V reverse voltage rating and a 3 A average forward current capability. The device utilizes an SQ-MELF (B) surface-mount package, designed for high-reliability applications. Key electrical parameters include a maximum non-repetitive peak forward surge current of 125 A, a forward voltage of 875 mV at rated current, and a reverse leakage current of 5 uA. The junction temperature range spans from -65 °C to +175 °C, with a typical reverse recovery time of 30 ns.

Single Diodes Feature Summary

• Fast recovery performance suitable for high-frequency switching applications
• High thermal stability with extended operating temperature range up to 175 °C
• Robust surge current handling capability for transient protection
• Surface-mount SQ-MELF package for compact board integration

Single Diodes Applications

• High-reliability aerospace power supplies
• Military-grade DC-DC converter circuits
• Aviation communication system rectification
• Harsh environment industrial control electronics

Single Diodes Procurement Notes

Verify the specific suffix URS confirms the SQ-MELF surface-mount configuration, as standard 1N5811 variants may differ in package type. Ensure procurement channels provide traceability documentation required for JANS class components. Confirm RoHS status if applicable to your assembly process, as military-grade parts may have distinct compliance markings. Validate that the supplier offers genuine Microchip Technology products to avoid counterfeit risks associated with specialized semiconductor devices.

Single Diodes Selection Notes

Select this component when a surface-mount solution is required for fast recovery rectification in space-constrained designs. The SQ-MELF package offers advantages over through-hole alternatives in automated assembly processes. Consider the 150 V rating and 3 A current capacity against circuit demands. Evaluate the 30 ns recovery time against switching frequency requirements. Compare thermal management needs given the 175 °C maximum junction temperature limit.

Single Diodes Part Context

This part belongs to the 1N58xx series of silicon fast recovery power rectifiers. It supersedes older MIL-S-19500/477B specifications under MIL-PRF-19500/477D standards. The JANS designation indicates a specific reliability grade within the broader 1N5811 family. Microchip Technology produces this device to meet stringent environmental and performance criteria for defense and aerospace markets.

Single Diodes Replacement Considerations

Direct substitutes include other JANS-class 1N5811 variants from qualified manufacturers. Verify pinout compatibility for the SQ-MELF B package before substitution. Cross-reference electrical ratings such as reverse voltage and forward current to ensure equivalent performance. Check for any changes in recovery time or leakage current that might affect circuit behavior.