JANS2N5153

Single Bipolar Transistors Overview

The JANS2N5153 is a PNP silicon bipolar junction transistor (BJT) manufactured by Microchip Technology. It utilizes a TO-39 metal can package with three leads for through-hole mounting. The device supports a maximum continuous collector current of 2 A and withstands a collector-emitter voltage of 80 V. Key electrical parameters include a collector-base voltage rating of 100 V, an emitter-base voltage limit of 5.5 V, and a power dissipation capacity of 1 W. The component operates within a temperature range from -65 °C to +200 °C.

Single Bipolar Transistors Feature Summary

• Radiation-hardened design suitable for space environments
• Military-grade reliability standards

Single Bipolar Transistors Applications

• Spacecraft electronic systems
• Satellite communication circuits
• High-reliability military avionics

Single Bipolar Transistors Procurement Notes

Verify the specific radiation tolerance levels and lot traceability documentation required for your mission profile. Confirm that the procurement channel provides necessary quality certifications. Ensure the ordering suffix matches the exact configuration needed for your schematic. Validate compliance with relevant defense or aerospace supply chain regulations before finalizing orders.

Single Bipolar Transistors Selection Notes

Select this component when high radiation hardness and wide operating temperature ranges are mandatory. Compare its TO-39 footprint against available board space constraints. Evaluate the 2 A current capability against peak load requirements in switching applications. Consider the thermal management needs associated with the 1 W power dissipation rating in enclosed enclosures.

Single Bipolar Transistors Part Context

This part belongs to the JANS series of radiation-hardened semiconductors produced by Microchip Technology. These components are engineered specifically for harsh environments where standard commercial parts would fail due to ionizing radiation effects. The series ensures long-term stability and performance retention in orbital conditions.

Single Bipolar Transistors Replacement Considerations

Direct replacements must match the JANS radiation qualification level. Verify pinout compatibility with the TO-39 package. Check if alternative parts meet the same -65 °C to +200 °C operating temperature range. Ensure equivalent electrical ratings for voltage and current handling.