Single Bipolar Transistors JANSD2N2369AUB product image

JANSD2N2369AUB

$126.82
  • Description:RH SMALL-SIGNAL BJT
  • Series:-

SKU:fb783c746ba1 Category: Brand:

  
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JANSD2N2369AUB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RH SMALL-SIGNAL BJT. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSD2N2369AUB

  • Description:RH SMALL-SIGNAL BJT
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10mA, 1V
  • Power - Max:400 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/317

Single Bipolar Transistors datasheet and documents for JANSD2N2369AUB

JANSD2N2369AUB

Single Bipolar Transistors Overview

The JANSD2N2369AUB is a small-signal NPN bipolar junction transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in a three-pin ceramic radial leaded (CER RH) package designed for through-hole mounting. The device supports a maximum collector current of 200 mA and dissipates up to 680 mW of power. Key voltage ratings include a collector-emitter breakdown voltage of 20 V, a collector-base voltage of 40 V, and an emitter-base voltage of 4.5 V. It operates within a temperature range of -65°C to +200°C.

Single Bipolar Transistors Feature Summary

  • Constructed with silicon planar technology for reliable signal switching performance.
  • Encased in a hermetically sealed three-pin ceramic package suitable for harsh environments.
  • Designed for high-temperature operation with a maximum junction temperature of 200°C.

Single Bipolar Transistors Applications

  • Military aerospace electronic systems
  • High-reliability communication equipment
  • Industrial control circuits requiring extended temperature stability

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against official Microchip documentation to ensure compliance with required military or space-grade standards. Confirm that the ceramic radial leaded package matches the mechanical constraints of the target assembly. Check for any active product change notifications regarding material composition or testing procedures before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component when a hermetically sealed NPN transistor is required for high-temperature applications exceeding standard plastic package limits. Ensure the circuit design accommodates the 200 mA collector current and 680 mW power dissipation capabilities. Verify that the through-hole mounting style aligns with the printed circuit board layout and assembly processes.

Single Bipolar Transistors Part Context

This part belongs to the JAN2N2369 family of small-signal transistors produced by Microchip Technology. It shares core electrical characteristics with other variants in the series but differs in packaging and environmental qualification. The JAN prefix typically indicates adherence to specific military screening requirements distinct from commercial equivalents.

Single Bipolar Transistors Replacement Considerations

JANSM2N2369AUBC

Single Bipolar Transistors FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +200°C.

What type of package does this transistor use?

It uses a three-pin ceramic radial leaded (CER RH) package.

What is the collector-base voltage rating?

The maximum collector-base voltage is 40 V.

JANSD2N2369AUBJANSD2N2369AUB
$126.82
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