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JANSF2N2906A is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 60V 0.6A TO-18. Review the specifications below when checking this part for your BOM.
The JANSF2N2906A is a PNP small-signal bipolar junction transistor manufactured by Microchip Technology. It features a maximum collector current of 600 mA and a collector-emitter voltage rating of 40 V. The device has a power dissipation capacity of 400 mW and utilizes a hermetically sealed ceramic package with three pins. Designed for high-reliability applications, it operates within a temperature range of -55 °C to +175 °C.
Verify export control status and required documentation before procurement. Confirm the specific suffix designation matches the intended radiation hardness level. Ensure compatibility with existing thermal management designs due to the specified power dissipation limits. Validate supplier authorization for military-grade components.
Select this component when radiation tolerance and long-term stability are critical. Compare against standard commercial equivalents if environmental constraints allow. Consider the thermal resistance of the ceramic package during circuit layout. Verify that the 40 V voltage rating meets the peak transient requirements of the target application.
This part belongs to the JAN series of transistors, which are designed for military specifications. It serves as a ruggedized alternative to commercial small-signal BJTs. The family emphasizes durability in extreme environments where standard semiconductors may fail.
Direct substitutes include other JAN-rated PNP transistors with matching electrical parameters. Verify pinout compatibility before substitution. Cross-reference with MIL-PRF-19500 specifications for equivalent performance levels.
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