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JANSR2N7587U3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is RH MOSFET 100V U3. Review the specifications below when checking this part for your BOM.
The JANSR2N7587U3 is a radiation-hardened N-channel power MOSFET utilizing Microchip's M6 technology, designed for space and military applications. It features a maximum continuous drain current of 22 A at 25°C and 19 A at 100°C, with a maximum on-resistance of 42 mΩ. The device withstands up to 300 Krad(Si) total ionizing dose and offers single-event effect hardening. Packaged in the hermetically sealed SMD-0.5 (TO-254) format, it supports junction temperatures from -55°C to 150°C.
Verify that the ordering suffix U3 corresponds to the SMD-0.5 package type as documented. Confirm the specific radiation screening level required for your mission profile, as different suffixes denote varying Total Ionizing Dose tolerances. Ensure compatibility with the TO-254 mechanical footprint during PCB layout.
Select this component when high reliability in extreme radiation environments is required. The low RDS(on) minimizes conduction losses, while the robust SEE performance ensures operation under heavy ion exposure. Consider thermal derating factors if operating above 25°C case temperature.
This part belongs to Microchip's Rad-Hard MOSFET family based on M6 technology. It serves as a radiation-tolerant alternative to standard commercial transistors for aerospace systems. The internal designation MRH10N22U3SR identifies the same device within the manufacturer's catalog.
JANSF2N7587U3
The device is rated for environments greater than 300 Krad Total Ionizing Dose.
The U3 suffix indicates the SMD-0.5 (TO-254) surface-mount package.
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