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JANTXV1N4148UBCC/TR is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is DIODE ARRAY GP 75V 200MA UB. Review the specifications below when checking this part for your BOM.
The JANTXV1N4148UBCC/TR is a hermetically sealed small-signal switching diode manufactured by Microchip Technology. It features a dual configuration within a leadless ceramic LCC-3 package, designated as DO-213AA-2. The device supports a peak repetitive reverse voltage of 75 V and a maximum forward current of 100 mA. Key electrical characteristics include a reverse recovery time of 5 ns, a maximum reverse leakage current of 500 nA, and a maximum junction capacitance of 4 pF. It operates reliably across an extended temperature range from -65°C to +200°C.
Verify the specific suffix TR indicates tape and reel packaging upon order confirmation. Confirm that the JAN prefix denotes compliance with MIL-PRF-19500/116N specifications. Ensure the procurement channel provides traceability documentation required for military-grade components. Validate that the received units match the hermetic seal requirements specified in the datasheet.
Select this component when a dual-diode configuration is required in a compact surface-mount footprint. The JANTXV grade offers tighter parameter tolerances compared to standard JAN levels. Consider the 5 ns recovery time for high-frequency signal processing. Verify that the 75 V reverse voltage rating meets the circuit's peak inverse voltage demands.
This part belongs to the 1N4148 family of silicon switching diodes, specifically adapted for ruggedized environments. The JANTXV designation signifies a screened military grade variant produced under strict quality controls. It supersedes older MIL-PRF-19500/116M specifications, ensuring compatibility with modern defense electronics standards while maintaining legacy pinout functionality.
The component utilizes a leadless ceramic LCC-3 package, also identified as DO-213AA-2.
It contains a dual configuration, housing two independent diodes within a single package.
The maximum operating temperature is specified as +200°C.
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