KSA1015OTA

Single Bipolar Transistors Overview

The onsemi KSA1015OTA is a PNP epitaxial silicon transistor housed in a TO-92 package. It supports a maximum collector current of 150 mA and withstands collector-emitter voltages up to 50 V. The device features a total power dissipation rating of 400 mW at 25 °C, with a thermal resistance of 312 °C/W from junction to ambient. Electrical characteristics include a DC current gain (hFE) ranging from 70 to 400 depending on the classification, a saturation voltage of -0.3 V max, and a transition frequency of 80 MHz.

Single Bipolar Transistors Feature Summary

• PNP epitaxial silicon construction for low-frequency amplifier applications
• Complementary pairing capability with NPN transistors such as the KSC1815
• RoHS compliant manufacturing utilizing lead-free and halogen-free materials

Single Bipolar Transistors Applications

• Low-frequency signal amplification circuits
• General-purpose switching applications
• Complementary output stages paired with NPN counterparts

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Note that certain variants listed in historical records may be discontinued. Confirm current availability directly with authorized distributors or the manufacturer representative to ensure compliance with active production status and valid RoHS material declarations.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a standard PNP general-purpose transistor with moderate voltage ratings. Ensure the required DC current gain falls within the specified hFE classification bands. Validate thermal management requirements against the 400 mW dissipation limit and derating curves for high-temperature environments.

Single Bipolar Transistors Part Context

This device belongs to the KSA series of PNP transistors manufactured by onsemi. It serves as a discrete semiconductor solution for analog and digital circuitry. The part utilizes a through-hole TO-92 mechanical outline, providing a compact form factor suitable for prototyping and consumer electronics assembly.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the KSC1815 as the direct complementary counterpart. Verify pinout compatibility and electrical parameters when substituting with other generic PNP transistors.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage rating?

The absolute maximum collector-base voltage (VCBO) is rated at -50 V.

How does the DC current gain vary?

The DC current gain (hFE) is classified into different ranges, typically spanning from 70 to 400 depending on the specific binning code.

Is the device suitable for high-frequency RF applications?

No, it is designed for low-frequency amplifier applications with a transition frequency of 80 MHz.