KSA1142OSTU

Single Bipolar Transistors Overview

The KSA1142OSTU is a discontinued PNP epitaxial silicon transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of -180 V and a collector-base voltage (VCBO) of -180 V, with an emitter-base voltage (VEBO) rating of -5 V. The device supports a maximum continuous collector current of -100 mA. Power dissipation is rated at 1.2 W at an ambient temperature of 25°C and up to 8 W when the case is maintained at 25°C. The junction temperature limit is 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 90 to 320 depending on the classification, a saturation voltage (VCE(sat)) of -0.16 V typical at -50 mA collector current, and a current gain bandwidth product (fT) of 180 MHz.

Single Bipolar Transistors Feature Summary

• High voltage capability with -180 V collector-emitter and collector-base ratings suitable for demanding power applications.
• Integrated bias resistor network design allows replacement of single devices and external resistor networks to reduce system cost and board space.
• Low saturation voltage ensures efficient switching performance in digital and analog circuits.

Single Bipolar Transistors Applications

• Audio frequency power amplifier circuits
• High frequency power amplifier designs
• Complementary pairing with NPN transistors such as the KSC2682

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm RoHS compliance details via official documentation. Validate all operating parameters for specific application requirements before integration. Contact onsemi representatives for availability information or alternative sourcing options.

Single Bipolar Transistors Selection Notes

Evaluate thermal management requirements carefully given the 8 W case dissipation rating. Ensure circuit design accommodates the specified hFE ranges across different classifications. Consider the complementary nature of the device when designing push-pull amplifier stages. Verify package dimensions against existing PCB footprints for TO-126 mounting.

Single Bipolar Transistors Part Context

This component belongs to the KSA1142 series of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following corporate integration. The device is designed for general-purpose high-voltage switching and amplification tasks within discrete semiconductor applications.

Single Bipolar Transistors Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. Consult onsemi representatives for potential alternatives or updated ordering information regarding this discontinued device.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating for the KSA1142OSTU?

The maximum collector-emitter voltage (VCEO) is -180 V under standard test conditions.

Is the KSA1142OSTU recommended for new designs?

No, the device is discontinued and not recommended for new designs. Customers should contact onsemi representatives for further information.

What is the typical current gain bandwidth product (fT) of this transistor?

The current gain bandwidth product (fT) is typically 180 MHz when measured at VCE = -10 V and IC = -20 mA.