KSC2330YTA

Single Bipolar Transistors Overview

The KSC2330YTA is an NPN epitaxial planar silicon transistor manufactured by onsemi. It utilizes a TO-92-3 through-hole package designed for general-purpose switching and amplification applications. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 300 V and a collector-base voltage (VCBO) of 300 V. The device supports a maximum continuous collector current of 100 mA with a power dissipation rating of 1 W at 25°C. The DC current gain (hFE) ranges from 40 to 240, and the transition frequency (fT) is 50 MHz. Operating temperatures span from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High voltage capability with 300 V collector-emitter breakdown
• Epitaxial planar construction for reliable switching performance
• Wide operating temperature range suitable for industrial environments

Single Bipolar Transistors Applications

• General purpose switching circuits
• Low power amplifier stages
• Driver circuits for relays or indicators

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors as the part status is listed as obsolete. Confirm RoHS compliance details via official datasheets before integration. Check regional availability restrictions as distribution may be limited in certain markets. Ensure storage conditions meet semiconductor handling standards to prevent degradation prior to assembly.

Single Bipolar Transistors Selection Notes

Select this component for low-current high-voltage applications requiring small form factor packaging. Compare hFE ranges against circuit biasing requirements to ensure adequate gain. Consider thermal management constraints given the 1 W dissipation limit in the TO-92 package. Evaluate alternative packages if higher current capacity or surface mount mounting is required.

Single Bipolar Transistors Part Context

This part belongs to the KSC2330 series of NPN transistors produced by onsemi. It serves as a discrete semiconductor solution within the broader bipolar junction transistor portfolio. The device complements other low-power switching components in the manufacturer's lineup for consumer and industrial electronics design.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation. Consult official cross-reference guides for equivalent high-voltage NPN transistors in TO-92 packages.