KSD1588RTU

Single Bipolar Transistors Overview

The KSD1588 is an NPN epitaxial silicon transistor designed for low-frequency power amplifier applications. It features a collector-emitter voltage of 60 V and supports a continuous collector current of 7 A, with a peak pulse current capability of 15 A under specified duty cycle constraints. The device provides a DC current gain ranging from 20 to 200 depending on the classification grade. It operates with a maximum junction temperature of 150 °C and offers thermal dissipation capabilities up to 30 W when mounted on a case at 25 °C.

Single Bipolar Transistors Feature Summary

• Designed as a complementary component to the KSB1097 PNP transistor
• Optimized for low-speed switching operations in power amplifier circuits
• Manufactured as a lead-free device compliant with environmental standards

Single Bipolar Transistors Applications

• Low frequency power amplification
• Complementary driver stages utilizing paired NPN/PNP configurations
• General purpose switching applications requiring high current handling

Single Bipolar Transistors Procurement Notes

Verify the specific hFE classification suffix (Y, R, or O) required for your design, as this determines the DC current gain range. Confirm that the TO-220 Fullpack package aligns with your thermal management strategy, given the significant difference between free-air and case-mounted power dissipation ratings. Ensure the ordering code matches the desired quantity per tube.

Single Bipolar Transistors Selection Notes

Select the appropriate hFE grade based on the required base drive current and saturation voltage specifications for your load conditions. Consider the thermal resistance and derating curves when designing the heat sink, as performance varies significantly between ambient air cooling and direct case mounting. Validate the safe operating area limits against your specific voltage and current waveforms.

Single Bipolar Transistors Part Context

This component belongs to onsemi's discrete bipolar transistor lineup, specifically engineered for audio and RF power stages. It serves as the NPN counterpart to the KSB1097, facilitating push-pull output configurations. The TO-220 Fullpack housing provides robust mechanical stability and efficient thermal transfer paths for high-power industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the KSB1097 as its complement. No other direct substitute part numbers are documented in the provided source material.