Single Bipolar Transistors KSD401FYTU product image

KSD401FYTU

  • Description:TRANS NPN 150V 2A TO-220-3
  • Series:-

SKU:63a1463d9802 Category: Brand:

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KSD401FYTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 150V 2A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSD401FYTU

  • Description:TRANS NPN 150V 2A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):150 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):50µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 400mA, 10V
  • Power - Max:25 W
  • Frequency - Transition:5MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for KSD401FYTU

KSD401FYTU

Single Bipolar Transistors Overview

The KSD401FYTU is an NPN epitaxial silicon power transistor manufactured by onsemi, formerly Fairchild Semiconductor. It is housed in a TO-220 package and designed for vertical deflection output applications. The device features a collector-base voltage of 200 V, a collector-emitter voltage of 150 V, and a maximum collector current of 2 A. At a case temperature of 25°C, the collector dissipation rating is 25 W. The DC current gain ranges from 120 to 400 depending on the classification suffix.

Single Bipolar Transistors Feature Summary

  • Designed specifically for vertical deflection output circuits
  • NPN epitaxial silicon construction with high voltage capability
  • Complementary to the KSB546 PNP transistor

Single Bipolar Transistors Applications

  • Vertical deflection output stages in television sets
  • High voltage switching applications
  • Power amplifier circuits requiring high breakdown voltage

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as Rochester Electronics distributes this part sourced from original manufacturers. Confirm that the component meets the required RoHS compliance status and lead-free specifications before integration into designs. Ensure the TO-220 package dimensions match the intended thermal management and mounting requirements.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with a minimum 150 V collector-emitter rating is required. The 2 A continuous collector current makes it suitable for moderate power applications. Consider the complementary KSB546 if a push-pull configuration is needed. Verify the hFE bin (Y or G) matches the circuit's gain requirements.

Single Bipolar Transistors Part Context

This component belongs to the family of discrete power transistors used in consumer electronics, particularly display technologies. It serves as a critical switching element in deflection circuits where high voltage handling and reliable saturation are necessary. The TO-220 package provides a robust mechanical structure for heat dissipation during operation.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the KSB546 as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.

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