KSD526YTU

Single Bipolar Transistors Overview

The KSD526YTU is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-220-3LD (CASE 340AT) through-hole package. It supports a maximum collector current of 4 A and a collector-emitter voltage of 80 V. The device dissipates up to 30 W at 25°C case temperature and operates with junction temperatures reaching 150°C. Electrical characteristics include a DC current gain ranging from 15 to 240 depending on the classification, a saturation voltage of 0.45 V typical at 3 A, and a transition frequency of 8 MHz.

Single Bipolar Transistors Feature Summary

• Complements the KSB596 PNP transistor for push-pull configurations
• Constructed using epitaxial silicon technology for robust switching performance
• Designed as a lead-free compliant device

Single Bipolar Transistors Applications

• Power amplifier applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official datasheet specifications before integration. Confirm that the ordering suffix YTU corresponds to the tube packaging format containing 1000 units per tube. Ensure thermal management solutions accommodate the 30 W dissipation rating at the intended operating case temperature. Validate compliance with RoHS directives if required by the end product regulations.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high current handling capabilities alongside moderate voltage ratings. The TO-220-3LD package facilitates effective heat sinking for power dissipation requirements. Consider the specific hFE classification needed for the application's gain stability requirements. Verify that the 8 MHz transition frequency aligns with the operational bandwidth constraints of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the KSD526 series of NPN transistors produced by onsemi. It serves as the complementary counterpart to the KSB596 PNP device, enabling efficient implementation of complementary symmetry circuits. The series is engineered for general-purpose power switching and amplification tasks within electronic systems.

Single Bipolar Transistors Replacement Considerations

The KSB596O is documented as the complementary PNP device for this series.