Single Bipolar Transistors KSD560RTSTU product image

KSD560RTSTU

$1.33
  • Description:TRANS NPN DARL 100V 5A TO-220-3
  • Series:-

SKU:fe2bad22d734 Category: Brand:

  
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KSD560RTSTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN DARL 100V 5A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSD560RTSTU

  • Description:TRANS NPN DARL 100V 5A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 3mA, 3A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 3A, 2V
  • Power - Max:1.5 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for KSD560RTSTU

KSD560RTSTU

Single Bipolar Transistors Overview

The KSD560RTSTU is an NPN epitaxial silicon Darlington transistor manufactured by ON Semiconductor. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 5 A. The device provides high DC current gain, ranging from 2000 to 15000 depending on the classification code. It operates with a junction temperature up to 150 °C and dissipates up to 30 W when mounted to a case at 25 °C. The component utilizes a TO-220 package for thermal management.

Single Bipolar Transistors Feature Summary

  • High DC current gain suitable for low frequency power amplification
  • Capable of handling significant collector current for industrial switching applications
  • Designed as a complement to the KSB601 PNP counterpart

Single Bipolar Transistors Applications

  • Low frequency power amplifier circuits
  • Industrial use switching applications
  • Complementary driver stages paired with KSB601

Single Bipolar Transistors Procurement Notes

Verify the specific suffix RTSTU against the official ON Semiconductor ordering database to confirm availability and exact packaging specifications. Ensure the procurement channel sources genuine components to avoid counterfeit risks associated with legacy Fairchild part numbers now managed by ON Semiconductor.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high current gain and moderate voltage ratings in a robust TO-220 package. Consider the thermal dissipation requirements carefully, as performance depends heavily on case temperature mounting conditions. Validate the hFE bin selection against the specific circuit drive requirements.

Single Bipolar Transistors Part Context

This device belongs to the NPN Epitaxial Silicon Darlington Transistor family originally developed by Fairchild Semiconductor. Following corporate integration, these parts are now distributed under the ON Semiconductor brand. The KSD560 serves as a standard discrete solution for medium-power switching and amplification tasks.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the KSB601 as the complementary PNP device. Verify pinout compatibility and electrical symmetry if substituting within existing designs. Consult the manufacturer's website for updated part nomenclature changes resulting from system integrations.

KSD560RTSTUKSD560RTSTU
$1.33
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