KSD985OSTU

Single Bipolar Transistors Overview

The KSD985OSTU is an NPN epitaxial silicon Darlington transistor housed in a TO-126 package. It features a collector-emitter voltage of 60 V and a continuous collector current rating of 1.5 A. The device provides high DC current gain, with the R classification offering a minimum hFE of 2000 at IC = 1 A. Key electrical parameters include a collector-base voltage of 150 V, emitter-base voltage of 8.0 V, and a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

• Darlington configuration providing high DC current gain for low drive current requirements
• Epitaxial silicon construction ensuring robust switching performance
• TO-126 through-hole package designed for effective thermal dissipation

Single Bipolar Transistors Applications

• Low frequency power amplifier circuits
• Low speed switching applications
• Industrial use control systems

Single Bipolar Transistors Procurement Notes

Verify the specific hFE bin (R, O, or Y) required for your design, as gain varies significantly between classifications. Confirm the datasheet revision and manufacturer origin, as this component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Ensure the TO-126 lead form matches your PCB footprint requirements.

Single Bipolar Transistors Selection Notes

Select the KSD985OSTU when high current gain is necessary to drive loads with minimal base current. The 60 V collector-emitter rating suits moderate voltage applications. Consider the thermal derating curve for case temperatures above 25 °C to ensure the 10 W dissipation limit is not exceeded during operation.

Single Bipolar Transistors Part Context

This component belongs to the KSD985/986 series of NPN Darlington transistors. The KSD985 variant is distinguished by a 60 V collector-emitter voltage rating, whereas the KSD986 offers 80 V. Both share identical pinouts and general electrical characteristics, differing primarily in their voltage withstand capabilities.

Single Bipolar Transistors Replacement Considerations

The KSD986OSTU serves as a direct functional substitute if a higher collector-emitter voltage rating of 80 V is acceptable or required for the application circuit.