KST06MTF

Single Bipolar Transistors Overview

The KST06MTF is a single NPN silicon epitaxial bipolar junction transistor (BJT) manufactured by onsemi. It is housed in a surface-mount SOT-23-3 package with dimensions of 2.9 x 1.3 x 0.97 mm and weighs 8 mg. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 4 V. The device supports a continuous collector current of 500 mA and a power dissipation of 350 mW. It features a gain-bandwidth product (fT) of 100 MHz, a minimum DC current gain (hFE) of 50, and a collector-emitter saturation voltage of 250 mV. The component operates within a temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• Single NPN silicon epitaxial structure for reliable switching performance
• Surface-mount SOT-23-3 packaging for compact circuit integration
• High voltage tolerance with 80 V collector-emitter rating
• Moderate frequency response suitable for general-purpose applications

Single Bipolar Transistors Applications

• General-purpose signal switching circuits
• Low-power amplifier stages
• Digital logic interface buffers
• Consumer electronics control boards

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized distributors as the part is obsolete. Check datasheet revisions for parameter consistency. Ensure storage conditions maintain moisture sensitivity levels. Confirm pinout alignment with SOT-23-3 standards during assembly. Validate thermal management requirements against the 350 mW dissipation limit.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 80 V voltage rating and 500 mA current capacity is required in a small surface-mount package. Consider the 100 MHz bandwidth for moderate-speed switching applications. Evaluate thermal constraints due to the 350 mW power dissipation limit in the SOT-23-3 form factor. Compare against available substitutes if supply continuity is critical for production.

Single Bipolar Transistors Part Context

The KST06MTF belongs to onsemi's standard discrete transistor portfolio, designed for general-purpose electronic applications. It represents a legacy component within the manufacturer's BJT lineup, offering a balance of voltage handling and current capability in a compact footprint. The device is part of the broader category of single bipolar transistors used in consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The MMBT6429LT1G is listed as an available substitute for the obsolete KST06MTF. Verify electrical parameter compatibility, including voltage ratings, current limits, and package dimensions, before implementing any replacement in existing designs.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the KST06MTF?

The maximum collector-emitter voltage (VCEO) is 80 V.

Is the KST06MTF still in production?

No, the KST06MTF is classified as obsolete and is no longer manufactured by onsemi.

What is the recommended surface-mount package for this transistor?

The KST06MTF uses the SOT-23-3 surface-mount package.