LSIC2SD120N120PA

Diode Arrays Overview

The LSIC2SD120N120PA is a dual-series Silicon Carbide Schottky Barrier Diode rated for 1200 V repetitive peak reverse voltage. It provides a continuous forward current of 120 A per leg at a case temperature of 25 °C, with a maximum operating junction temperature of 175 °C. The device features an extremely fast switching behavior that is independent of temperature and exhibits zero reverse recovery current. Electrical characteristics include a typical forward voltage of 1.5 V at 60 A and 25 °C, and a maximum thermal resistance of 0.34 °C/W per leg.

Diode Arrays Feature Summary

• Positive temperature coefficient ensures safe operation and facilitates ease of paralleling multiple units.
• Zero reverse recovery current eliminates ringing patterns and significantly reduces switching losses compared to silicon bipolar diodes.
• Copper base plate with aluminum nitride isolation provides low thermal resistance and high electrical isolation voltage.

Diode Arrays Applications

• Boost diodes in Power Factor Correction (PFC) or DC/DC stages
• Switch-mode power supplies
• Solar inverters
• Uninterruptible power supplies (UPS)
• Industrial motor drives

Diode Arrays Procurement Notes

Verify the specific Littelfuse datasheet revision date against the manufacturing lot code on the component body. Confirm that the mounting torque specifications are strictly adhered to during installation to maintain the specified thermal performance and mechanical integrity. Ensure the heatsink interface is compatible with the SOT-227B package dimensions provided in the official documentation.

Diode Arrays Selection Notes

Select this component when designing circuits requiring high-voltage blocking capabilities combined with high surge current tolerance. The parallel configuration allows for efficient current sharing in high-power applications. Consider the positive temperature coefficient for simplified thermal management and the ability to operate reliably at elevated junction temperatures up to 175 °C without derating concerns associated with minority carrier storage.

Diode Arrays Part Context

This device belongs to the LSIC2SD series of second-generation Silicon Carbide Schottky Barrier Diodes manufactured by Littelfuse. The 'PA' suffix indicates a parallel configuration within a single module housing. It utilizes the SOT-227B (miniBLOC) package outline, which is designed for screw-mounting onto heatsinks to maximize thermal dissipation in industrial power electronics environments.

Diode Arrays Replacement Considerations

Direct replacements must match the 1200 V rating, 120 A per leg current capacity, and SOT-227B package footprint. Verify that substitute components offer comparable zero reverse recovery characteristics and similar thermal resistance values to ensure system reliability is not compromised.

Diode Arrays FAQ

What is the isolation voltage between the terminals and the backside?

The device provides an isolation voltage of 3000 V RMS at 50/60 Hz.

How does the forward voltage change with temperature?

The forward voltage exhibits a positive temperature coefficient, increasing from a typical 1.5 V at 25 °C to approximately 2.1 V at 175 °C under a 60 A load.

Is the switching behavior dependent on temperature?

No, the device features extremely fast switching behavior that is independent of temperature due to the absence of reverse recovery current.