LXZ1000-23-13/TR

RF Diode Overview

The LXZ1000-23-13/TR is a radio frequency Schottky diode manufactured by Microchip Technology, designed for high-frequency signal processing applications. It features a single series configuration within an SOT-23-3 surface-mount package. The device is characterized by a maximum peak reverse voltage of 1V and a power dissipation rating of 75mW. Key electrical specifications include a junction temperature limit of 125°C and a capacitance of 0.3pF measured at 500mV and 1MHz. This component is suitable for RF detection and mixing circuits requiring low forward voltage drop and fast switching characteristics.

RF Diode Feature Summary

• Schottky barrier construction for low forward voltage and minimal charge storage
• Single series diode configuration optimized for RF signal paths
• SOT-23-3 surface-mount package for compact PCB integration

RF Diode Applications

• RF signal detection and envelope detection circuits
• High-frequency mixing applications in communication systems
• Microwave detector stages in test and measurement equipment

RF Diode Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm tape-and-reel packaging status. Confirm RoHS compliance and environmental declarations prior to procurement. Ensure the supplier provides traceability to the original manufacturer. Cross-reference the full part number with current datasheets to validate availability and any recent manufacturing changes.

RF Diode Selection Notes

Select this component when a low-capacitance Schottky diode is required for RF frequencies up to microwave ranges. The 1V reverse voltage rating limits its use to low-voltage signal paths. Compare the 0.3pF capacitance value against circuit requirements to ensure minimal signal attenuation. Verify that the SOT-23-3 footprint matches the design layout constraints.

RF Diode Part Context

This part belongs to the LXZ1000 series of RF Schottky diodes from Microchip Technology. The series is engineered for applications demanding small form factors and consistent RF performance. The LXZ1000-23-13 variant specifically denotes the 1V reverse voltage rating within this product line.

RF Diode Replacement Considerations

Consult Microchip's official comparable part tool for verified alternatives. Ensure any substitute maintains the SOT-23-3 package and 0.3pF capacitance specification. Verify that the replacement diode meets the same 1V peak reverse voltage and 75mW power dissipation ratings.