MA3S132EGL

Description：DIODE ARRAY GP 80V 100MA SSMINI3
Series：-

SKU:dad5c5192b34 Category: Diode Arrays Brand: Panasonic Electronic Components

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

MA3S132EGL is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARRAY GP 80V 100MA SSMINI3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MA3S132EGL

Description：DIODE ARRAY GP 80V 100MA SSMINI3
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
Diode Configuration：1 Pair Common Cathode
Technology：Standard
Voltage - DC Reverse (Vr) (Max)：80 V
Current - Average Rectified (Io) (per Diode)：100mA (DC)
Voltage - Forward (Vf) (Max) @ If：1.2 V @ 100 mA
Speed：Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)：3 ns
Current - Reverse Leakage @ Vr：100 nA @ 75 V
Operating Temperature - Junction：150°C (Max)
Mounting Type：Surface Mount
Package / Case：SC-89, SOT-490
Supplier Device Package：SSMini3-F3
Grade：-
Qualification：-

Diode Arrays datasheet and documents for MA3S132EGL

MA3S132EGL

Diode Arrays Overview

The MA3S132EGL is a silicon epitaxial planar switching diode manufactured by Panasonic Electronic Components. It features two isolated elements within an SSMini3-F3 package, designed for high-density mounting in switching circuits. The device has a reverse voltage rating of 80 V and a forward current capability of 100 mA (single) or 150 mA (double). Key electrical parameters include a maximum reverse recovery time of 3 ns and a terminal capacitance of 2 pF at 1 MHz.

Diode Arrays Feature Summary

Contains two electrically isolated diode elements within a single compact package to facilitate high-density circuit mounting.
Features a short reverse recovery time suitable for high-speed switching applications.
Provides very low terminal capacitance to minimize signal interference.

Diode Arrays Applications

General purpose switching circuits
High-frequency rectification
Clamping and protection circuits

Diode Arrays Procurement Notes

Verify the specific suffix 'EG' against the manufacturer's official documentation to confirm pin configuration and marking codes. Confirm RoHS compliance status as required by your assembly specifications. Check the product lifecycle status on the manufacturer website, as this component may be subject to maintenance or discontinuation plans.

Diode Arrays Selection Notes

Select this component when space constraints require dual isolated diodes in a minimal footprint. Ensure the operating frequency aligns with the low terminal capacitance specification. Verify that the 80V reverse voltage rating exceeds the peak inverse voltage present in the target application circuit.

Diode Arrays Part Context

This part belongs to the MA3S132 series of silicon epitaxial planar switching diodes from Panasonic. The series includes variants like the MA3S132DG, which differs in internal connection polarity but shares similar electrical characteristics and packaging dimensions.

Diode Arrays Replacement Considerations

Cross-reference with other SSMini3-F3 packaged dual isolated switching diodes. Verify matching reverse voltage, forward current, and reverse recovery time specifications before substitution.

Diode Arrays FAQ

What is the difference between the MA3S132DG and MA3S132EG?

The primary difference lies in the internal connection polarity. The DG variant has cathodes on pins 1 and 2 with an anode on pin 3, while the EG variant has anodes on pins 1 and 2 with a cathode on pin 3.