Diode Arrays MA3S781D0L product image

MA3S781D0L

  • Description:DIODE ARR SCHOT 30V 30MA SSMINI3
  • Series:-

SKU:93b90af5a2c5 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MA3S781D0L is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is DIODE ARR SCHOT 30V 30MA SSMINI3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MA3S781D0L

  • Description:DIODE ARR SCHOT 30V 30MA SSMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Anode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io) (per Diode):30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 30 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):1 ns
  • Current - Reverse Leakage @ Vr:1 µA @ 30 V
  • Operating Temperature - Junction:125°C (Max)
  • Mounting Type:Surface Mount
  • Package / Case:SC-89, SOT-490
  • Supplier Device Package:SSMini3-F2
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MA3S781D0L

MA3S781D0L

Diode Arrays Overview

The MA3S781D0L is a silicon epitaxial planar Schottky barrier diode containing two independent diodes in one package. It supports high-speed switching with a maximum reverse voltage of 30 V and a single forward current rating of 30 mA. Key electrical characteristics include a typical forward voltage of 0.4 V at 1 mA, a maximum reverse current of 1 µA at 30 V, and a terminal capacitance of 1.5 pF. The device features a low reverse recovery time of 1.0 ns and operates within a junction temperature range up to 125 °C.

Diode Arrays Feature Summary

  • Dual configuration integrating two Schottky barrier diodes within a single compact package for high-density mounting.
  • Optimized for high-speed switching applications with minimal reverse recovery time.
  • Low forward voltage drop to enhance efficiency in signal detection and rectification circuits.

Diode Arrays Applications

  • High-speed switching circuits
  • Signal detection systems
  • General electronic equipment

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking specifications. Confirm that the component meets the required RoHS Directive compliance standards for your region. Check the latest product lifecycle status directly from Panasonic Electronic Components to determine availability and obsolescence risks before finalizing procurement plans.

Diode Arrays Selection Notes

Select this component when dual Schottky diodes are required in a minimal footprint for high-frequency operations. Ensure the design accommodates the 30 mA forward current limit per diode and the 30 V reverse voltage rating. Consider the 125 °C junction temperature limit for thermal management in enclosed environments.

Diode Arrays Part Context

This part belongs to the MA3S781 series of silicon epitaxial planar Schottky barrier diodes manufactured by Panasonic Electronic Components. The series is designed for general-purpose high-speed switching and detection tasks in standard electronic equipment.

Diode Arrays Replacement Considerations

Consult the manufacturer's official datasheet or contact sales staff for verified substitute part numbers. Do not assume cross-compatibility without confirming pinout, electrical ratings, and package dimensions match the original requirements.

Diode Arrays FAQ

What is the internal connection configuration of the MA3S781D?

The MA3S781D contains two independent diodes where Pin 1 is the cathode of Diode 1, Pin 2 is the cathode of Diode 2, and Pin 3 serves as the common anode.

What is the typical detection efficiency of this diode?

The detection efficiency is typically 65% under conditions of 3 V peak input voltage, 30 MHz frequency, 100 Ω load resistance, and 10 pF load capacitance.

Is this component suitable for aerospace or life support systems?

No. The datasheet specifies that these products are intended for standard applications such as office and household equipment. Special applications requiring exceptional reliability must be discussed with sales staff in advance.

MA3S781D0LMA3S781D0L

Click on the inquiry

Recent News