MA4E2502L-1246

RF Diode Overview

The MA4E2502L-1246 is a low barrier silicon Schottky diode from the MACOM Surmount series, designed for microwave circuits up to Ku band frequencies. It utilizes the Heterolithic Microwave Integrated Circuit (HMIC) process, embedding silicon pedestals in a glass dielectric to achieve extremely low parasitic capacitance and inductance without wirebonds. Key electrical specifications at +25°C include a maximum forward voltage of 330 mV at 1 mA, a minimum breakdown voltage of 3 V at 10 µA, and a typical junction capacitance of 0.10 pF at 0 V. The device supports an operating temperature range of -40°C to +125°C and features Class 0 HBM ESD protection.

RF Diode Feature Summary

• Surmount HMIC construction provides rugged mechanical performance with polyimide scratch protection and lower susceptibility to electrostatic discharge damage compared to conventional beam lead devices.
• Extremely low parasitic capacitance and inductance enable high-frequency operation suitable for mixers, detectors, and limiters through Ku band.
• Surface mountable design eliminates the need for wirebonds, allowing direct solder attachment to hard or soft substrates using standard surface mount techniques.

RF Diode Applications

• Microwave mixer circuits
• Sub-harmonic mixer applications
• RF detectors
• Signal limiters

RF Diode Procurement Notes

Verify the specific ordering suffix when sourcing components. The base model MA4E2502x-1246 is available as individual dies in carriers or on wafers. Bulk quantities are typically supplied via MADS-002502-1246xP reels or MADS-002502-1246xPW waffle packs. Confirm that the 'L' designation corresponds to the low barrier variant required for the circuit design.

RF Diode Selection Notes

Select the MA4E2502L-1246 specifically for applications requiring the lowest forward voltage drop among the series options. This low barrier configuration is optimal for low-power detection and mixing tasks where sensitivity is critical. Ensure the circuit layout accommodates the 1246 case style dimensions and utilizes appropriate soldering methods for the bottom mounting pads.

RF Diode Part Context

This component belongs to the MA4E2502 Series, which includes medium barrier (MA4E2502M) and high barrier (MA4E2502H) variants. All models share the same HMIC fabrication process and physical outline but differ in their electrical characteristics, specifically forward voltage and dynamic resistance, to suit different power and frequency requirements.

RF Diode Replacement Considerations

The datasheet indicates these devices facilitate the direct replacement of more fragile beam lead diodes. Specific equivalent part numbers for legacy beam lead components are not provided in the documentation; engineers must verify compatibility based on parasitic parameters and mounting pad alignment.