MA4P7438CA-287T

RF Diode Overview

The MA4P7438CA-287T is a silicon PIN diode from the MACOM SMPP series, configured as a common anode pair in an SOT-23 package. It features a thick intrinsic region to provide low distortion in attenuator circuits. Key electrical specifications include a reverse voltage rating of 200 V and a maximum total capacitance of 0.35 pF at 50 V. The device exhibits a maximum series resistance of 10.0 Ohms at 10 mA forward current and a nominal minority carrier lifetime of 3.0 µs. It operates within a temperature range of -65°C to +125°C.

RF Diode Feature Summary

• Thick intrinsic region designed for low distortion performance in attenuator applications
• Common anode dual diode configuration suitable for balanced circuit topologies
• High reverse voltage rating of 200 V with low off-state capacitance

RF Diode Applications

• Current controlled attenuator circuits
• Low distortion RF switching applications
• Infrastructure and CATV control systems

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the package type and packaging format. Ensure that the component meets all relevant environmental compliance standards required for the intended deployment environment before finalizing procurement orders.

RF Diode Selection Notes

Select this component when high reverse voltage capability and low distortion are critical requirements for the design. The common anode configuration simplifies biasing networks for differential or balanced signal paths compared to single diode implementations.

RF Diode Part Context

This part belongs to the MACOM SMPP series of surface mount plastic PIN diodes. The series includes various configurations such as single diodes, series tees, and common cathode pairs across multiple package styles including SOT-23, SC-70, and SOD-323.

RF Diode Replacement Considerations

The MADP-007438CA-287T is a direct functional equivalent within the same product family. Verify pinout compatibility and thermal characteristics if substituting with other series members like the MA4P7437CA-287T.

RF Diode FAQ

What is the nominal minority carrier lifetime for the MA4P7438CA-287T?

The nominal minority carrier lifetime is 3.0 µs, measured at a forward current of 10 mA and reverse current of 6 mA.

How does the I-region thickness affect the device performance?

The thicker intrinsic region provides lower distortion, making the device suitable for precision attenuator circuits.

What is the maximum series resistance specified for this part?

The maximum series resistance is 10.0 Ohms, measured at a forward current of 10 mA and a frequency of 100 MHz.