MA4SD1000L

Diode Arrays Overview

The MA4SD1000L is a silicon epitaxial planar Schottky Barrier Diode designed for super-high-speed switching circuits. It contains two isolated elements within one SSMini4-F1 package, enabling high-density mounting. Key electrical parameters include a reverse voltage of 20 V and an average forward current rating of 200 mA per element in single configuration. The device exhibits low forward voltage characteristics, with typical values ranging from 0.27 V at 5 mA to 0.47 V at 200 mA. Reverse recovery time is specified at 3 ns under defined test conditions.

Diode Arrays Feature Summary

• Contains two isolated Schottky barrier diode elements within a single compact package to facilitate high-density circuit mounting.
• Engineered for super-high-speed switching applications utilizing silicon epitaxial planar technology.
• Features low forward voltage drop characteristics to minimize power loss during operation.

Diode Arrays Applications

• Super-high-speed switching circuits
• General electronic equipment requiring fast rectification
• Communications equipment

Diode Arrays Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinued classifications may apply. Confirm that the SSMini4-F1 package dimensions align with your PCB footprint requirements. Ensure static discharge precautions are implemented during handling due to component sensitivity. Validate that the 20 V reverse voltage rating meets your circuit's peak inverse voltage demands.

Diode Arrays Selection Notes

Select this component when dual isolated Schottky diodes are required in a minimal footprint for high-frequency switching. The low forward voltage makes it suitable for efficiency-critical designs. Consider the 200 mA average forward current limit per element when sizing for load requirements. The 3 ns reverse recovery time supports applications demanding rapid transition speeds without significant switching losses.

Diode Arrays Part Context

This part belongs to Panasonic's Schottky Barrier Diode series, specifically optimized for speed rather than high power handling. It utilizes the SSMini4-F1 surface-mount package, which is distinct from larger through-hole or standard SMD packages. The dual-element isolation allows independent signal processing paths within a single physical component.

Diode Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for current equivalent listings.

Diode Arrays FAQ

What is the maximum reverse recovery time for the MA4SD1000L?

The maximum reverse recovery time is 3 ns, measured under conditions where IF = IR = 100 mA and RL = 100 Ω.

How many diode elements are contained in the MA4SD1000L package?

The package contains two isolated Schottky barrier diode elements.

What is the typical forward voltage at 200 mA?

The typical forward voltage (VF) is 0.47 V when the forward current (IF) is 200 mA.