Diode Arrays MB10H100CTHM3/I product image

MB10H100CTHM3/I

$0.72
  • Description:DIODE ARR SCHOTT 100V 5A TO263AB
  • Series:-

SKU:9a9b92707207 Category: Brand:

  
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MB10H100CTHM3/I is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 100V 5A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MB10H100CTHM3/I

  • Description:DIODE ARR SCHOTT 100V 5A TO263AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):5A
  • Voltage - Forward (Vf) (Max) @ If:760 mV @ 5 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:3.5 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 175°C
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB (D2PAK)
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for MB10H100CTHM3/I

MB10H100CTHM3/I

Diode Arrays Overview

The MB10H100CTHM3/I is a dual common cathode high voltage Schottky rectifier manufactured by Vishay General Semiconductor. It utilizes high barrier technology to deliver improved performance at elevated temperatures. The device features a D2PAK (TO-263AB) surface mount package and is AEC-Q101 qualified for automotive reliability. Key electrical parameters include a maximum repetitive peak reverse voltage of 100 V, a total maximum average forward rectified current of 10 A (5 A per diode), and a peak forward surge current of 150 A per diode. The typical instantaneous forward voltage is 0.61 V at 5 A and 125 °C, with a maximum reverse current of 3.5 μA at 25 °C. The operating junction temperature range extends from -65 °C to +175 °C.

Diode Arrays Feature Summary

  • High barrier technology provides enhanced high-temperature performance and low leakage current.
  • Guardring structure ensures overvoltage protection and long-term ruggedness.
  • Low forward voltage drop contributes to high efficiency and reduced power loss.
  • AEC-Q101 qualified for use in demanding automotive electronic environments.

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Freewheeling diodes in DC/DC converters
  • Polarity protection circuits

Diode Arrays Procurement Notes

Verify the specific ordering suffix HM3/I against the manufacturer's datasheet to confirm RoHS compliance, halogen-free status, and tape-and-reel packaging format. Ensure that the thermal management design accommodates the specified junction-to-case thermal resistance values for the D2PAK package under intended load conditions.

Diode Arrays Selection Notes

Select this component when a dual common cathode configuration is required for synchronous rectification or polarity protection applications. The 100 V rating and 10 A total current capacity suit low-voltage, high-frequency power conversion stages. Verify that the system operates within the specified -65 °C to +175 °C junction temperature range to maintain reliability.

Diode Arrays Part Context

This part belongs to the MB10HxxCT series of dual common cathode Schottky rectifiers from Vishay. The series offers various voltage ratings within the 100 V class, utilizing high barrier silicon technology. The HM3 suffix indicates a lead-free, halogen-free compliant version suitable for modern manufacturing processes requiring strict environmental standards.

Diode Arrays Replacement Considerations

Cross-reference with MF10H100CTHE3_B/P for through-hole ITO-220AB equivalents. Verify pinout compatibility and thermal resistance differences when substituting packages. Confirm that alternative parts meet AEC-Q101 requirements if automotive qualification is mandatory.

Diode Arrays FAQ

What is the maximum junction temperature for the MB10H100CTHM3/I?

The maximum operating junction temperature is +175 °C.

Does the MB10H100CTHM3/I meet automotive qualification standards?

Yes, the device is AEC-Q101 qualified.

What is the typical forward voltage drop at rated conditions?

The typical instantaneous forward voltage is 0.61 V when tested at 5 A per diode and a junction temperature of 125 °C.

MB10H100CTHM3/IMB10H100CTHM3/I
$0.72
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