Diode Arrays MBR10H200CT product image

MBR10H200CT

$1.22
  • Description:DIODE ARR SCHOT 200V 10A TO220AB
  • Series:-

SKU:dc15cf545966 Category: Brand:

  
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MBR10H200CT is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is DIODE ARR SCHOT 200V 10A TO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for MBR10H200CT

  • Description:DIODE ARR SCHOT 200V 10A TO220AB
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):200 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:970 mV @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:5 µA @ 200 V
  • Operating Temperature - Junction:-55°C ~ 175°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for MBR10H200CT

MBR10H200CT

Diode Arrays Overview

The MBR10H200CT is a dual common cathode Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features two independent silicon junctions within a single TO-220AB package, providing a combined continuous forward current of 10 Amperes (5A per element) and a maximum repetitive peak reverse voltage of 200 Volts. The device utilizes metal-silicon junction technology for majority carrier conduction, ensuring low power loss and high efficiency in switching applications.

Diode Arrays Feature Summary

  • Dual common cathode configuration integrating two independent Schottky elements
  • Metal-silicon junction construction enabling majority carrier conduction
  • Plastic encapsulation material classified under Underwriters Laboratory standard 94V-0

Diode Arrays Applications

  • Free wheeling diode circuits
  • Low power loss rectification systems
  • High efficiency DC-DC converters

Diode Arrays Procurement Notes

Verify the manufacturer designation on the component marking to confirm Taiwan Semiconductor origin, as multiple vendors produce identical part numbers. Ensure the specific suffix matches the required packaging or lead-free specifications if applicable. Cross-reference the datasheet electrical characteristics against the intended circuit requirements to validate performance margins.

Diode Arrays Selection Notes

Select this component for applications requiring a dual Schottky configuration in a through-hole TO-220AB package. The 200V rating suits low-voltage DC bus rectification. Consider the thermal management capabilities of the TO-220AB case for heat dissipation needs. Verify that the 5A per element current rating aligns with the load requirements of the specific circuit design.

Diode Arrays Part Context

This device belongs to the MBR10H series of high-temperature Schottky rectifiers from Taiwan Semiconductor. The series is characterized by plastic carriers and robust metal-silicon junctions designed for reliability in demanding environments. The TO-220AB package provides mechanical stability and efficient thermal transfer for power electronics applications.

Diode Arrays Replacement Considerations

Cross-model equivalents include MBR10H200CT-E3 from Vishay and MBR10H200CT from LGE. Verify pinout compatibility and thermal resistance values before substitution. Confirm that alternative manufacturers meet the same 94V-0 flammability classification and electrical ratings.

MBR10H200CTMBR10H200CT
$1.22
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