MBR12080CTR

Diode Arrays Overview

The GeneSiC Semiconductor MBR12080CTR is a silicon power Schottky diode module featuring a Twin Tower package. It provides an average forward current of 120 A per leg and supports repetitive peak reverse voltages up to 100 V. The device exhibits a maximum forward voltage of 0.84 V at Tj = 150 °C and a thermal resistance of 0.80 °C/W per leg. Operating temperatures range from -55 °C to +150 °C, with a peak forward surge current capability of 800 A.

Diode Arrays Feature Summary

• High surge current capability for robust transient handling
• Twin Tower package design for efficient mounting
• Low forward voltage drop characteristics
• Not ESD sensitive

Diode Arrays Applications

• DC-DC converters
• Free-wheeling rectification in motor drives
• Power supply output rectification

Diode Arrays Procurement Notes

Verify the specific suffix 'CTR' against the manufacturer's official documentation to confirm terminal configuration details, as datasheets indicate that devices with reversed leads may carry distinct suffixes. Ensure the procurement specification matches the required voltage rating within the 45 V to 100 V range and confirms the Twin Tower package type before ordering.

Diode Arrays Selection Notes

Select this component based on the 120 A continuous current requirement and the 100 V blocking voltage limit. Evaluate the 0.80 °C/W junction-to-case thermal resistance for heatsink compatibility. Confirm the operating temperature range meets system requirements, specifically noting the -55 °C to +150 °C junction limit.

Diode Arrays Part Context

This part belongs to the MBR120 series of silicon power Schottky diodes, which includes variants ranging from 45 V to 100 V. The series utilizes a Twin Tower package structure designed for high-current applications. The 'CTR' designation typically indicates specific lead configurations or packaging variations within this product family.

Diode Arrays Replacement Considerations

Compatible substitutes include other 120 A, 100 V Schottky modules in Twin Tower packages. Verify equivalent thermal resistance and forward voltage specifications. Check for identical pinout configurations to ensure mechanical interchangeability without PCB redesign.

Diode Arrays FAQ

What is the thermal resistance of the MBR12080CTR?

The thermal resistance from junction to case is 0.80 °C/W per leg.

Does the MBR12080CTR require ESD precautions during handling?

No, the device is not ESD sensitive according to the manufacturer's specifications.

What is the peak forward surge current rating?

The peak forward surge current is 800 A for an 8.3 ms half-sine wave pulse.