MBR20040CT

Diode Arrays Overview

The GeneSiC Semiconductor MBR20040CT is a silicon power Schottky diode module rated for a repetitive peak reverse voltage of 40 V and an average forward current of 200 A per package. It features a Twin Tower screw-mount package with electrically isolated base plates. The device exhibits a maximum forward voltage of 0.70 V per leg at 25 °C and supports a peak forward surge current of 1500 A per leg. Thermal resistance from junction to case is 0.45 °C/W per leg, enabling operation within a temperature range of -55 °C to +150 °C.

Diode Arrays Feature Summary

• High surge capability with 1500 A non-repetitive peak forward surge current support
• Electrically isolated base plate construction for simplified thermal management
• Twin Tower package design providing robust mechanical stability

Diode Arrays Applications

• DC-DC converter circuits requiring high efficiency
• Free-wheeling rectification in motor drive systems
• Power supply output rectification stages

Diode Arrays Procurement Notes

Verify the specific part number suffix against official documentation to confirm terminal configuration, as reversed lead variants exist within this series. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated assemblies. Ensure mounting torque specifications are strictly followed to maintain thermal interface integrity and prevent mechanical stress on the isolated base plate during installation.

Diode Arrays Selection Notes

Select this component when applications demand low forward voltage drop and high current handling capabilities within a 40 V blocking limit. The Twin Tower package facilitates direct heatsink mounting, reducing system thermal resistance compared to standard discrete packages. Evaluate the 0.45 °C/W junction-to-case thermal resistance against your cooling strategy to ensure the junction temperature remains within the specified 150 °C maximum under continuous load conditions.

Diode Arrays Part Context

This module belongs to the MBR200 series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. The series encompasses various voltage ratings from 20 V to 40 V, sharing identical current and thermal characteristics. These modules are designed for high-efficiency power conversion applications where fast switching speeds and low conduction losses are critical performance factors.

Diode Arrays Replacement Considerations

Cross-reference with other MBR200 series variants such as MBR20035CT or MBR20020CT if voltage requirements differ. Verify pinout compatibility, particularly regarding potential lead reversals indicated by suffixes like 'R', before substituting existing designs.